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35n60c Abstract: ixkp35n60c5m Contextual Info: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	35N60C5M O-220 20080310a 35n60c ixkp35n60c5m	PDF

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35n60c

Abstract: ixkp35n60c5m
Contextual Info: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

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35N60C5M O-220 20080310a 35n60c ixkp35n60c5m

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