A9 NPN Search Results

smd 3y3

Abstract: SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd
Contextual Info: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) VDOUT[15:0] 3 U2 2 20 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 O1 O2 O3 O4 O5 O6 O7 O8 ROMD0 ROMD1 ROMD2 ROMD3 ROMD4 ROMD5 ROMD6 ROMD7 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0

d-y59a

Abstract: SMC D-B73C D-A59W double diode 5341 dh7a1 zener 48v D-J59 DIODE ZENER X ZENER A34 D-H7A1
Contextual Info: Fonction Page 5.3-1 D–C7/C8 D–C73C/C80C D–B5/B6 D–B59W D–A3/A4 D–A3„A/A44A D–A3„C/A44C D–A7/A8 D–A7„H/A80H D–A73C/A80C D–A79W D–A5/A6 D–A59W D–A9/A9„V D–9/9„A D–E7„A/E80A D–Z7/Z8 D–H7 D–H7C D–H7BAL D–H7„F D–H7„W

conn 20X2

Abstract: 245-DIR ISA-12V ISP1181 LA18 LA20 q1 npn3904 npn3904 header 20X2 HEADER 6X2
Contextual Info: 1 2 3 4 5 6 ISA-5V CONN2 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 ISA-D7 ISA-D6 ISA-D5 ISA-D4 ISA-D3 ISA-D2 ISA-D1 ISA-D0 ISA-IORDY# ISA-AEN D ISA-A16 ISA-A15 ISA-A14 ISA-A13 ISA-A12

Contextual Info: 9 Transistor I/O Link Module B7A-P P10 Save Space and Reduce Wiring Back to PLC Rack for 10 I/O Points 1 Transmit 10 input signals over just 2 wires 3 wires if only one terminal has a power supply 1 Connect 3-wire NPN output sensors to B7A screw terminal models (two-wire

Contextual Info: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative

NN5118160A

Abstract: NN5118160B WA137
Contextual Info: NN5118160A / NN5118160B series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a DESCRIPTION The NN5118160A / NN5118160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN5118160A / B series is fabricated with advanced CMOS technology and designed with

nn5118165

Abstract: NN5118165A
Contextual Info: N E N D C M 5 1 O 1 8 1 H O S 6 y p 5 A e r P x 1 1 M / N a 6 N g b e i t 5 1 M D 1 8 o y n 1 6 d e a m 5 i c B s R e A r i e NPN>a< s M DESCRIPTION T h e NN5118165A / NN5118165B series is a high performance C M O S Dynamic Random Access Memory organized as

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC

Contextual Info: NN514170 series Fast Page Mode CMOS 256K X 16bit Dynamic RAM NPN>Â< DESCRIPTION The NN514170 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514170 series is fabricated with advanced CMOS technology and designed

Contextual Info: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative

NN514400

Contextual Info: NN514400/ NN514400A / NN514400B series Fast Page Mode CMOS 1M x 4bit Dynamic RAM NPN a DESCRIPTION The NN514400/A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN514400/A/B series is fabricated with advanced CMOS technology and de­

Contextual Info: NN514800 seríes Fast Page Mode CMOS 512K X 8bit Dynamic RAM NPN>a< Preliminary Specification DESCRIPTION The NN514800 series is a high performance CMOS Dynamic Random Access Memory organized as 524,288 words by 8 bits. The NN514800 series is fabricated with advanced CMOS technology and designed

Contextual Info: NN51V4400B series Fast Page Mode CMOS 1M x4b it Dynamic RAM NPN>a Preliminary Specification 1 r DESCRIPTION The NN51V4400B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN51V4400B series is fabricated with advanced CMOS technology and de­

Contextual Info: NN514100A series Fast Page Mode CMOS 4M x 1bit Dynamic RAM NPN a DESCRIPTION The NN514100A series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100A series is fabricated with advanced CMOS technology and designed with innovative design tech­

UM66

Abstract: 1355052 UM3750 ultrasonic piezo speaker infrared security alarm K3G097-AK34-65 melody generator UM66 melody generator UM66T Series UM66T
Contextual Info: UNITE» MICROELECTRONICS U M 6 6 T S e r íe s 3DE D 'iBESflSE 00DD2S1 3 Simple Melody Generator Features Pin Configuration • 62-note ROM memory 1 ■ 1.3V to 3.3V operating voltage and low power con­ UM66 T xxx 85xx sumption ■ Dynamic speaker can be driven w ith an external NPN

A984

Abstract: c2274 C2274 E transistor c2274 A984k C2274K 2SC2274 2SA984 VCEO50 transistor 2sc2274
Contextual Info: 2SA984, 984K 2SC2274, 2274K 465F f “ ill PNP/npn E p ita x ia l Planar S ilic o n T ransistors 2 0 03 A Low Frequency Power Amp Applications Features . High breakdown v o l t age V c e o = 5 0 / 8 0 V . . High current (Ic=500mA). . Lo w saturation voltage.

Contextual Info: NN514100 series Fast Page Mode CMOS 4 M x 1bit Dynamic RAM NPN a< DESCRIPTION The NN514100 series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100 series is fabricated with advanced CMOS technology and designed

nn514405

Contextual Info: NN514405 / NN514405B series EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN514405/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405/B series is fabricated with advanced CMOS technology and de­

BF259

Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.

Contextual Info: NN5116165A/ NN5118165A series EDO Hyper Page Mode CMOS 1Mx 16bit Dynamic RAM NPN)a( Preliminary Specification d e s c rip tio n The NN5116165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116165A/18165A series is fabricated with advanced CMOS

2SD427

Abstract: Transistor 2SD427 2SD427R 2sd427 transistor q406 250427 2sd427-r
Contextual Info: 2 s d 427 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o m tn tm m o Power A m p l i f i e r A p p l i c a t i o n s Unit in m m *2 5 .0 MAX, • ^ i' 0 * ia, • &i E t t o : P 0 = sow : v 0EQ = 2 SB 5 5 7 5 0 J K 120V i i t t H i - F i Hr — i * 4 * 7 's T'tti £ S K f t j § T-J-0

2N3506

Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Contextual Info: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)

2SC3293

Abstract: SC46 m 5768 2 diode ZENER A8
Contextual Info: Ordering number: EN 13330 N0.1333C 2SC3293 NPN Planar Silicon Darlington Transistor SANYO i Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . Features • High DC current gain.