A6 TSOP-6 MARKING Search Results

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

MX29F002BQC-70G

Abstract: 29F002T
Contextual Info: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

66 pin tsop package

Abstract: 256mb ddr333 200 pin
Contextual Info: PREVIEW‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • b 111S 4 S OQD771E ORT ■ NRN ADVANCE M IC ü n Q N I sem ico nducto r.inc. MT48LC4M4R1 4 MEG X 4 SDRAM 3.3 VOLT, PULSED RAS, DUAL BANK, SELF REFRESH FEATURES • Fully synchronous; all signals excluding clock enable registered to positive edge of system clock

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

MT46V16M16

Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

MT46V16M16

Abstract: 66 pin tsop package DDR200 DDR266 DDR333 MT46V32M8 MT46V64M4 256mb ddr333 200 pin
Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

48-PIN

Abstract: 48-pin TSOP I flash memory marking code p18
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64340, 23C64380 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C64340 and µPD23C64380 are 67,108,864 bits mask-programmable ROM. The word organization is

256mb ddr333 200 pin

Abstract: MT46V16M16
Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 16:39 µPD23C16000L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The µPD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

PD23C8000L

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT UPD23C8000L 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C8000L is a 8,388,608 bits mask-programm able ROM. The word organization is selectable (BYTE mode:

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

ES29LV400D

Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

Contextual Info: ADVANCE MT28F800S2/MT28F008S2 V 512K x 16,1 MEG x 8 FLASH MEMORY FLASH MEMORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S m a r tV o lta g e FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX

M1142

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32040L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32040L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE

256mb ddr333 200 pin

Abstract: mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

256mb ddr333 200 pin

Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

uPD431000AGW-70ll-a

Abstract: uPD431000AGW-70L-A PD431000A UPD431000AGW70LLA M1165 upd431000a M11657EJCV0DS00 uPD431000ACZ-85L uPD431000AGW UPD431000AGW70LL-A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

63-Ball

Abstract: fbe063-63-ball ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation

ES29LV160D

Abstract: es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

MX29F040

Abstract: 29F040-70 555H MX29F040QC-70G MXIC PB FREE
Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

uPD431000AGW-70X-A

Abstract: PD431000A-X uPD431000AGZ-B15X-KJH-A uPD431000AGZ-B12X-KJH-A uPD431000AGZ-B10X-KJH-A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.