A468 Search Results

Contextual Info: ARK-LE5 CORPORATION DEPi i I STOUGHTON, MA CUSTOM ER PART NO: PART NAME: 4000-A4687-7/-89- l 3 4 5 6 7 8 D R A W IN G "A” WIRE PART NUMBER STUD SIZE DIA. RAN8E 3 9 10 II 1? NC JZ 607 1 250 4000-A4G87-7 8 . 172 12-18 NONE 4000-A4G87-9 10 . 198 12-18 NONE

G4333M

Abstract: A4332
Contextual Info: Power-Induktivitäten/ Power Inductors, Baugröße/ Size 10x10 / Ln LR fL In / Ir I s at R mh MHz A A Q r 'm ax MHz Ordering code B82464 ^Res, min / Ln Lr fL In / Ir I s at R ' ‘ max mh MHz A A Q MHz Ordering code B82464 l n/l r mh MHz fL A In / Ir A I s at

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

TC511664BJl

Abstract: toshiba TC511664BJL TC511664
Contextual Info: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION T: '1'Call SG4TUL/EZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The lc3 ibJL/'BZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced

Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009

B41550-A7478-Q

Abstract: A9688
Contextual Info: Capacitors with Screw Terminals SIKOREL 105, LL Grade B 41 550 B 41 570 Maximum reliability For highly professional switch-mode power supplies Operating temperatures up to 105 "C Construction • • • • • Charge-discharge proof, polar Aluminum case with insulating sleeve

Contextual Info: TENTATIVE DATA 65,535 WORD x 15 BIT DYNAMIC RAM D E S CRIPTION T b e T C S l l GkW BJL'BZL is the new g e n e ra tio n dyna^nic R A M o rg an ize d 6 5 ,536 w ords by 16 b its. The T C £ t J6 6 4 0 JL /3 Z .L u tilize s T O S H IB A 'S C M O S S ilic c r. p:.te p rocess tech n ology as weii a s ad van ced

marking A4

Abstract: A4-241J A4-100K A4-150K A4-R15K A4-R22K A4-R33K A4-R47K A4-R56K
Contextual Info: 98 SPECIFICATIONS AXIAL MOLDED RF INDUCTOR SERIES A4 FEATURES - Meets all requirements of MIL-C-15305 - Sturdy construction - High reliability, uniform in size, ideal for auto insertion - Precision performance ELECTRICAL CHARACTERISTICS - Inductance range

ESAC61-004

Abstract: SC-65 a469 esac61 SCHOTTKY -004
Contextual Info: E S A 6 C 1 - 4 i 2 A SCH O TTKY BARRIER DIODE ^ Features 1&VF Low V f * 4 " /T X V -V ic & i' Super high speed switching. im t t t Connection Diagram SH4 High reliability by planer design : Applications High speed power switching. M axim um Ratings and Characteristics

memory card reader ckt diagram

Abstract: vl1001 toshiba is 1462 LT 542 seven segment display P04020-XXXS I002 JTMP04020-XXXS 7 SEGMENT DISPLAY LT 543 PIN CONFIGURATION I0003 I0021
Contextual Info: TOSHIBA JTM P04020-XXXS TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JTMP04020-XXXS CM OS 4 BIT LL MICROCONTROLLER LL : LOW POWER CONSUMPTION & LOW VO LTAGE OPERATION MICROCONTROLLER JTMP04020-XXXS is a high-performance LL microcontroller developed for use in contact-type personal

a1277

Abstract: a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835
Contextual Info: Single Ended GP - Capacitors B 41821 Standard Series - 85°C B 43821 Construction Radial leads Charge-discharge proof, polar Aluminum case, insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions High CV product, i.e. Very compact

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

Contextual Info: E S A C 6 1 - 0 4 i 2 A '> 3 'y h + w < ij7 '^ > r ^ _ K SCHOTTKY BARRIER DIODE • 4 # ^ 1 Features • teV F Low V f • *> r v T 's ' f x y '- w f t m i - m ' Super high speed switching. ¡PTE C onnection D iagram High reliability by planer design.

WS80a

Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
Contextual Info: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen

TDA4565

Abstract: TDA4555 TDA4650 TDA4670 TDA4680 TDA4685 TDA4686 TDA4686WP 12C-bus 15354 time switch
Contextual Info: b3E D NAPC/PHILIPS SEMICOND • ^53*124 D07Ö4MM 411 W Ë S I C 3 Preliminary specification Philip* Sem iconductor* Video Products Video processor, with automatic cut-off control FEATURES A4686 • Cut-off measurement pulses after end of the vertical blanking pulse or end of an

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

020C

Abstract: A4102 B82464 B82464A4362
Contextual Info: SMT–Power–Inductors B82464–A4 DATA SHEET Size 10x10 mm Rated inductance 1 µH . 1000 µH Construction S Ferrite core S Winding: enamel copper wire S Winding welded to terminals Features S Wide temperature range S Very high rated current S Low DC resistance

transistor c4108

Abstract: C4108 C4108M a539 c4108 datasheet equivalent of transistor c4108 A4108 c4108 transistor C5108 IEC 68-2-6
Contextual Info: Capacitors with 4 Snap-In Terminals and Solder Pins 85 °C B 43 511 B 43 521 LL grade Especially high volumetric efficiency Construction ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Overload protection by preset break point in case

A7188

Abstract: EPCOS CS 230 04 07 0 A7827 A6688M B43456
Contextual Info: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B43456, B43458 Date: December 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

siemens B43570

Abstract: B2338
Contextual Info: Capacitors with Screw Terminals High-Performance Versions, LL Grade B 43 550 B 43 570 Maximum reliability and long service life Operating temperatures up to 105 °C Construction • • • • • Charge-discharge proof, polar Aluminum case with insulating sleeve

M3329

Abstract: B41538-A2109-M
Contextual Info: 3-Pin Capacitors 105 °C Not for new design B 41 538 LL grade Especially long useful life High volumetric efficiency Construction ● Charge-discharge proof, polar ● Aluminum case with insulating sleeve ● Solder pin terminals brought out at one end to fit standardized PCB spacings

B43683

Abstract: a8107
Contextual Info: Axial-Lead Capacitors 105 °C B 41 683 B 43 683 LL grade High reliability and long useful life For professional industrial electronics equipment Construction ● ● ● ● Charge-discharge proof, polar Aluminum case with insulating sleeve Negative pole connected to case

A956

Abstract: a768 B41783 6f321 A9226
Contextual Info: Capacitors with Soldering Star 105 °C B 41 783 B 43 783 LL grade High reliability and long useful life For professional industrial electronics equipment Construction ● Charge-discharge proof, polar ● Aluminum case, partially insulated ● Solder pin terminals on mounting base that is securely