A44 TRANSISTOR Search Results

BR A44

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BR A44

Abstract: TRANSISTOR A44 To92 transistor
Contextual Info: A44 A44 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR A44

Abstract: BR A44
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES y High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. EMITTER Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO

Contextual Info: A44 YOUDA TRANSISTOR SI NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A44 TRANSISTOR NPN 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: A44 YOUDA TRANSISTOR Si NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

BD5431

Contextual Info: 1/4 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: PACKAGE: FEATURES: HTSSOP-A44 BD5431EFS 1 2) 3) 4) 5) 6) Differential Analog / PWM inputs High efficiency and low heat generation eliminates external heat-sinks

TRANSISTOR A44

Abstract: BR A44 datasheet of ic 555 IC 555 A44 npn
Contextual Info: A44 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES * High voltage * High Reliability 1 2 3 1 2 3 1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol

IC 555

Abstract: datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR（ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W 2.BASE （Tamb=25℃） Collector current 3. COLLECTOR ICM : 0.2 A Collector-base voltage

Contextual Info: Transistors DIP Type NPN Transistors A44 Features 1. OUT High voltage 1 Emitter 2. GND 2 Base 3. IN 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage

Contextual Info: TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage

A44 npn

Contextual Info: A44 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC

BR A44

Contextual Info: A44 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.2 A Collector-base voltage V (BR)CBO :400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

Contextual Info: 1/7 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: BD5427EFS PACKAGE: FEATURES: HTSSOP-A44 1 2) High efficiency and low heat generation eliminates external heat-sinks Eliminates pop noise generated when the power supply goes on/off, or when the power supply is

Industrial Drives

Contextual Info: V23990-P630-A44-PM flow 90PIM 1 1200V/25A Features flow 90PIM 1 ● Trench Fieldstop Technology IGBT4 for low saturation loss ● Supports design with 90° mounting angle between heatsink and PCB ● Clip-in PCB mounting ● Clip or screw on heatsink mounting

Contextual Info: 1/4 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: PACKAGE: FEATURES: HTSSOP-A44 BD5424EFS 1 2) 3) 4) 5) 6) 7) High efficiency and low heat generation eliminates external heat-sinks Eliminates pop noise generated when the power supply goes on/off, or when the power supply

Contextual Info: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

A45A

Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
Contextual Info: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8

SGA-4486

Abstract: A44 marking amplifier pin configuration transistor A44 TRANSISTOR A44 "Bipolar Transistor" A44
Contextual Info: Product Description Stanford Microdevices’ SGA-4486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

4463 B

Abstract: TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier SGA-4463 pin configuration transistor A44 ZL 15 a
Contextual Info: Product Description Stanford Microdevices’ SGA-4463 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

TRANSISTOR A44

Abstract: BR A44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon MPSA44 M otorola P referred Device EMITTER 1 MAXIM UM RATINGS 3 Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 400 Vdc C ollector-B ase Voltage VCBO 500 Vdc E m itter-B ase Voltage