A4 DIODE Search Results

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

IR-Laser-Diode

Abstract: A4 diode IR-Laser-Diode DVD low noise 780nm laser diode "Photo Diode" cd photo diode ir laser diode cdr photo diode 650nm pick*up dvd*rom
Contextual Info: Photo diode IC KOD-1082 Features DIMENSIONS Unit : Full CMOS Seven Channel, Integrated High Speed Photodiodes and Current to Voltage Transimpedance Amplifiers Four High Speed( 55/35MHz typ) Data Channels (A1/a1 ~ A4/a4) Two Low Speed Tracking Channels (E, F)

cd photo diode

Abstract: IR-Laser-Diode "Photo Diode" 650nm IR-Laser-Diode DVD photo diode CD pickup laser diode 780NM Laser-Diode DIODE A4 DVD RW circuit diagram
Contextual Info: Photo diode IC KOD-1081 Features DIMENSIONS Full CMOS Seven Channel, Integrated High Speed Unit : Photodiodes and Current to Voltage Transimpedance Amplifiers Four High Speed( 55/35MHz typ) Data Channels (A1/a1 ~ A4/a4) Two Low Speed Tracking Channels (E, F)

Contextual Info: www.fairchildsemi.com K A4 3 1 S/K A4 3 1 SA/K A4 3 1 SL Progra m m a ble Shunt Re gulat or Features Description • • • • The KA431S/KA431SA/KA431SL are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output

A431

Contextual Info: www.fairchildsemi.com K A4 3 1 /K A4 3 1 A/K A4 3 1 L Progra m m a ble Shunt Re gulat or Features Description • • • • The KA431/KA431A/KA431L are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be

Contextual Info: Li IXYS Mil 200-12 A4 IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 200-12 A4 MDI 200-12 A4 270 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' M sc^J 90-+ , 3 I 0 l Preliminary data TO Symbol Conditions Maximum Ratings VcES

BAV70

Abstract: BAV74
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 Connection Diagram 3 A4 2 1 1 SOT-23 3 2 MARKING A4 BAV74 BAV70 1 2 JA Small Signal Diode Absolute Maximum Ratings* Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Value Units 70 50 200

BAV70

Abstract: BAV74 BAV99 fairchild sot-23 bav70 FAIRCHILD DIODE
Contextual Info: BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BAV70

Abstract: BAV74 1JA2 BAV70 ON diode bav70 a433
Contextual Info: BAV70 / BAV74 Discrete POWER & Signal Technologies N BAV70 / 74 3 1 2 SOT-23 1 3 CONNECTION DIAGRAMS A4 3 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Mil 300-12 A4 Li IXYS IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 300-12 A4 MDI 300-12 A4 330 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' , 3 I 0 M l sc^J 9 0 -+ Preliminary data T O E 72873 Symbol Conditions Maximum Ratings

Contextual Info: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MDI MID 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

ic equivalent MID 400

Abstract: E72873
Contextual Info: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

E72873

Abstract: 20012 W8020 200-12A4 ic equivalent MID 400
Contextual Info: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

Contextual Info: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 MARKING A4 BAV74 1 JA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 70 50 Units V V IF AV

ixys 150-12

Abstract: E72873 resistor 240 diode A4 56 ic equivalent MID 400
Contextual Info: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID MDI 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: Laser Diodes 808 nm High Brightness Laser Diode BLD-81-tt-20W-A4-C BLD-81-tt-30W-A4-C High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and superior beam quality. The products are achieved by transforming the asymmetric

Contextual Info: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID MDI 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: Laser Diodes 976 nm High Brightness Laser Diode BLD-98-tt-20w-A4-C BLD-98-tt-30w-A4-C High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and superior beam quality. The products are achieved by transforming the asymmetric

Contextual Info: BurrĆBrown Products from Texas Instruments OPA340 OPA2340 OPA4340 OP A4 340 OP A3 40 OPA 2340 OP A4 340 SBOS073A – SEPTEMBER 1997 – REVISED APRIL 2007 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION •

Contextual Info: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: BurrĆBrown Products from Texas Instruments OPA340 OPA2340 OPA4340 OP A4 340 OP A3 40 OPA 2340 OP A4 340 SBOS073A – SEPTEMBER 1997 – REVISED APRIL 2007 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION •