A38 TRANSISTOR Search Results

a38 TRANSISTOR

Abstract: SMA38 CA38
Contextual Info: A38 / SMA38 Cascadable Amplifier 10 to 2000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +19 dBm TYP. • HIGH THIRD ORDER I.P.: +30 dBm (TYP.) • WIDE BANDWIDTH: 10-2000 MHz Description The A38 RF amplifier is a discrete thin film hybrid design,

a38 TRANSISTOR

Contextual Info: Cascadable Amplifier 10 to 2000 MHz A38/ SMA38 V3 Features Product Image • HIGH OUTPUT POWER: +19 dBm TYP. • HIGH THIRD ORDER I.P.: +30 dBm (TYP.) • WIDE BANDWIDTH: 10-2000 MHz Description The A38 RF amplifier is a discrete thin film hybrid design,

SMA38

Abstract: transistor DB 42A WJ-A38
Contextual Info: WJ-A38 / SMA38 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +19 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10-2000 MHz Outline Drawings Specifications * A38 Typical Characteristics

SPEC-A38

Abstract: mmst3906 2n3906 transistors UMT3906
Contextual Info: Transistors SPEC-A38 609 Transistors FElectrical characteristic curves 610 UMT3906/SST3906/MMST3906/2N3906 Transistors UMT3906/SST3906/MMST3906/2N3906 FElectrical characteristic curves 611 Transistors FElectrical characteristic curves 612 UMT3906/SST3906/MMST3906/2N3906

2N3906

Abstract: 2n3906 transistors SPEC-A38 mmst3906 UMT3906 transistors
Contextual Info: Transistors SPEC-A38 609 Transistors FElectrical characteristic curves 610 UMT3906/SST3906/MMST3906/2N3906 Transistors UMT3906/SST3906/MMST3906/2N3906 FElectrical characteristic curves 611 Transistors FElectrical characteristic curves 612 UMT3906/SST3906/MMST3906/2N3906

CA38

Abstract: SMA38 a38 TRANSISTOR
Contextual Info: A38/SMA38 10 TO 2000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +19 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · WIDE BANDWIDTH: 10-2000 MHz Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)

SMA38

Abstract: CA38
Contextual Info: A38/SMA38 10 TO 2000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +19 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · WIDE BANDWIDTH: 10-2000 MHz Typical Performance @ 25°C Specifications (Rev. Date: 4/02)* Characteristics Typical Frequency Small Signal Gain (min.)

WJ A38

Abstract: A38S
Contextual Info: UJ ij A38 / SMA38 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +19 dBm TYP HIGH THIRD ORDER I.P: +30 dBm (TYP.) WIDE BANDWIDTH: 10-2000 MHz •¡SSI Outline Drawings Specifications Characteristics

BC 3205 transistor

Abstract: TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1
Contextual Info: WJ-A38-1 /SMA38-1 A 3 8 -1 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +18 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10 - 2000 MHz -m m _ S n -"« v i ^ i W* *1b*t*-a-

transistor c37

Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Contextual Info: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22

a38 TRANSISTOR

Abstract: NF A38
Contextual Info: PNP small signal transistor Die no. A-38 These epitaxial planar PNP silicon transistors are gold doped. Dimensions Units : mm TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage BVCE0 = 40 V (min) at

transistor R2A

Abstract: a38 TRANSISTOR
Contextual Info: PNP small signal transistor Die no. A-38 These epitaxial planar PNP silicon transistors are gold doped. Dimensions Units : mm Features • available in the following packages: — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59), see page 300 • collector-to-emitter breakdown

marking r2k

Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Contextual Info: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers

BFX90

Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
Contextual Info: 01 - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 00 00 91 00 91 9L 00 9 9 00 L 01 001 01 9ZL ZL 9'0 — 90 9> 98 9'17 98 98 S'17 817 Z — Z 817 Z 98 50 98 S'0 09 05 05 OS 093 06 06 OZI OLL 001

2N4401 EBC

Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K
Contextual Info: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.

Darlington pair IC

Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
Contextual Info: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V

Small Signal Amplifiers

Abstract: UMT3906
Contextual Info: Bipolar transistors-US/European series NPN transistors, UMT3 Table 11 General purpose small signal amplifiers BVCbo BVceo BVEBo Part no. UMT2222A UMT3904 UMT4401 Table 12 Part no. UMT918 m in m in m in V V V 75 60 60 60 40 40 6 6 6 •C B0 V CB m ax nA 100

UOJ 220

Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
Contextual Info: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90

BFR 450

Abstract: bfx74a Transistor BFR 35 BFR16 BFR18 BFW43 BFW44 BFX38 BFX39 BFX40
Contextual Info: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90

60V PNP TO-92

Abstract: 500ma 40v pnp
Contextual Info: Transistors • TO-92 Package/PNP Type For General Purpose Small Sig nal Am plifiers Part No. Package BVceo Min. 2N3703 TO-92 EC8 50V BVceo BV ebo Min. Min. 30V 5V '“ ° @VC0 . h? . @IC & VCE Min. Max. Max. 100nA 20V 30 150 50mA 5V VcE(sat) Max. VBE(sat)

Contextual Info: Bipolar transistors-US/European series PNP transistors, SST3 and SMT3 Table 5 General purpose small signal amplifiers P art no. SST3 SM T3 B V CBo b v ce0 B V eb0 IC B 0 V CB min min m in max V 50 SST 6839 V V 40 nA 1 V h FE @ >C & V CE m in 1max | m A | V

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.