A35 DIODE Search Results

A35 diode

Abstract: A35 equivalent 443E-01 D1809N
Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1809N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften

A35 diode

Contextual Info: SKT 240 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 240 Features  

Contextual Info: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      

semikron skt 240

Abstract: thyristor bridge circuit skt semikron thyristor SKT 240
Contextual Info: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      

Contextual Info: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      

semikron thyristor skt

Abstract: thyristor SKT 240 semikron thyristor semikron skt 240 thyristor skt thyristor semikron thyristor application thyristor scr SCR, SEMIKRON skt semikron
Contextual Info: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      

Contextual Info: Advanced Technical Information GaAs ' Diodes Contents 1 TO-220 AC Current i %* >> 1 • a C K d y v S l y 1C ^DC TO-220 AB 2 V A V 150/180 150/180 10 20 1.1 0.9 DGS10 DGS20 A A 1.1 0.9 DGSK20 DGSK40 A A 1.5 1.1 DGS10 DGS20 A A 1.5 1.1 DGSK20 DGSK40 A A z 150/180

MB12A35V60

Abstract: MB11A06 MB11A02V60 MB11A02V80 MB11A06V40 MB11A01V20 MB11A06V80 MB11A02V20 a06 801 MB12A10V
Contextual Info: POW EREX IN C ~ T L I> F | 0001333 7 f 7“ - z 3 - 0 7 Thyristor and Diode Modules Single Phase Diode Modules toe@ Tc Am ps (°C) Vrrm (Volts) I fsm (Am ps) trr (typica l) (lisec) VlSOL (V r us) Package Type No. 1.5 50 50 50 — 1500 A01 MB11A01V05 1.5

zener diode A29

Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

zener diode A36

Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

700-PK400A1

Abstract: 700-PK400-A1 199-FSMA11 NEMA P600 199-FSMA10 4 pole relay
Contextual Info: Bulletin 700 Control Relays Type P, PK, and PH Bulletin 700 S S S S Cat. No. 700-P400A1 Cat. No. 700DC-P200 S Cat. No. 700-PK400A1 Cat. No. 700-PH200 S Direct Drive Convertible Contact Cartridge Relays Type P, PK, and PH 600V Maximum AC/DC Overlapping Contact

20N120

Abstract: IC IGBT 20N120
Contextual Info: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ

Contextual Info: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.283 7.2 0.260(6.6) For surface mounted applications.

DIODE marking code A34

Abstract: A35 diode DIODE A34 A37 diode a35 marking code marking A33 marking codes A32 FM301 marking code A35 diode FM303
Contextual Info: A31-A37 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8) 0.144(3.6)

DIODE A34

Abstract: DIODE marking code A34 A37 diode A35 diode marking codes A32 FM301 FM302 FM303 FM304 FM305
Contextual Info: Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.

Contextual Info: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)

Contextual Info: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous

a35 marking code

Abstract: DIODE marking code A34 marking diode DO-214AB A37 diode MARKING CODE A37 DIODE A34 marking codes A32 MIL-S-19500 csmc
Contextual Info: CYStech Electronics Corp. Spec. No. : C344SC Issued Date : 2003.10.29 Revised Date : Page No. : 1/3 3.0Amp. Surface Mount Rectifier CSMC30XSC Series Features • For surface mounted applications. • Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0

BSN3005L

Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g gate s source d drain

BSN3005L

Abstract: A35 diode
Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 2 g s gate • Direct interface to C-MOS, TTL etc. 3 d drain DESCRIPTION

IC IGBT 20N120

Abstract: IXDH20N120AU1 ixdh20n120au 20N120
Contextual Info: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW

marking B43 diode SCHOTTKY

Abstract: mosfet a06 marking B26 diode SCHOTTKY marking B34 diode SCHOTTKY LGS260-DO DIODE B93 950554-00x marking B47 diode SCHOTTKY diode marking j35 be1 marking diode
Contextual Info: 5 4 3 2 1 Evaluation Platform System Electronic s Board D D Revision D THIS SCHEMATIC IS PROVIDED "AS IS" WITH NO WARRANTIES WHATSOEVER,NCLUDING I ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY PARTICULAR PURPOSE , OR ANY WARRANTY OTHERWISE ARISING OUT OF PROPOSAL, SPECIFICATION OR

a35 marking code

Abstract: MARKING CODE A37 A37 diode marking A32 markING CODE A35 marking codes A32 50V-1000V FM301 FM302 FM303
Contextual Info: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 List List. 1 Package outline. 2

Contextual Info: Formosa MS Chip General Purpose Rectifiers FM301-B THRU FM307-B List List. 1 Package outline. 2