A1A07TA Search Results

d358

Abstract: D35B pitch 0.4 QFP 256p D20B D22B D24B D268 D28B LH5420 LH543620
Contextual Info: LH5420 256 x 36 x 2 Bidirectional FIFO FEATURES • TTL/CMOS-Compatible I/O • Fast Cycle Times: 25/30/35 ns • Space-Saving PQFP Package • Two 256 x 36-bit FIFO Buffers • PQFP to PGA Package Conversion * • Full 36-bit Word Width FUNCTIONAL DESCRIPTION

Contextual Info: 8M 1M x 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface

lg washing machine circuit diagram

Abstract: LH28F016SU TSOP 54 tray
Contextual Info: SHARP LH F16S12 1 LH28F016SUR-10 16 Mbit 1 Mbit x 16, 2 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE FEA TU R ES. 2 CONTENTS PAGE 3 4.0 BUS OPERATIONS, COMMANDS AND STATUS REG ISTER

MARKING AHW

Abstract: PEAK tray drawing ScansU9X28
Contextual Info: SHARP LHP V 5 6 2 S 1 Contents 1. General .*. 2 2. Features . . 2 3. Pin Configuration and Pin Description -. 3 .

LH28F400BVB-TL85

Contextual Info: Product Spoticatioss S H A R P Integraled Circuiis Group LH28F400BVB-TL85 Flash Memory 4M 512K x8/256K x 16 (Model No.: LHF40V07) Spec No.: EL107003 Issue Date: December 11,1998 aiflDT^fl □ D B lclb3 354 SHARP LHF40V07 •H andle this document carefully for it contains material protected by international copyright law.