A198 Search Results

TRANSISTOR a1981

Abstract: a1981 TRANSISTOR 2sa1981 2sa1981 2sc5344 9003
Contextual Info: A1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. A1981 Marking Package Code A1981 TO-92 Outline Dimensions

A198S

Contextual Info: A198S E lektrische E igenschaften Höchstzulässige Werte Periodische VorwärtsSpitzensperrspannung E lectrical properties M axim um rated values 600,800 100 0,1 1 0 0 1 2 0 0 ,1 3 0 0 * V v V repetitive peak forward off-state voltage tvj - Vorwärts-Stoßspitzenspannung

TRANSISTOR a1981

Abstract: A1981 2SA1981N 2sc5344n
Contextual Info: A1981N Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344N Ordering Information Type NO. Marking Package Code A1981N A1981 TO-92N Outline Dimensions

A198S

Abstract: A118
Contextual Info: A198S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties kMaximum rated values Periodische VorwärtsSpitzensperrspannung repetitive peak forward off-state voltage t, = -4o”C.t,., vDRM 600,800 V 1000,1100 v 1200,1300* V Vorwärts-Stoßspitzenspannung

A198S

Abstract: A118
Contextual Info: A198S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties kMaximum rated values Periodische VorwärtsSpitzensperrspannung repetitive peak forward off-state voltage t, = -4o”C.t,., vDRM 600,800 V 1000,1100 v 1200,1300* V Vorwärts-Stoßspitzenspannung

diode S4 68a

Abstract: 3456B A198S DIN41814-151A4 A198 DIN41814
Contextual Info: AE G -A K T IEN G ESELLSC H A FT Ô 1CD H G O S T M IS D G D S T b H ? •A E G G A 198 S Typenreihe/Typerange_ A198S 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsU drm Spltzensperrspannung

T120F

Abstract: T670F T188F T290F thyristoren T308F T 698 T691S T510S T318
Contextual Info: Maßbilder/Outlines Thyristoren/Thyristors T 72 F T 80 F T 102 F T120F case B T 320 F 5 154 T318 F T 358 S T 408 F T 698 F T 1078 F A 358 S A 438 S 2 T 290 F 4 T 128 F T 178 F 6 T 468 S T188F T 308 F A 158s A198S Maßbilder/Outlines Thyristoren/Thyristors

2sa1981

Abstract: Transistor TRANSISTOR a1981 A1981 2sc5344
Contextual Info: A1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code A1981 A1981 TO-92 Outline Dimensions

A198S

Abstract: A118
Contextual Info: A198S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties kMaximum rated values Periodische VorwärtsSpitzensperrspannung repetitive peak forward off-state voltage t, = -4o”C.t,., vDRM 600,800 V 1000,1100 v 1200,1300* V Vorwärts-Stoßspitzenspannung

a7s diode

Abstract: A198 A198S DIN41814 DIN41814-151A4
Contextual Info: ai D E l O O S W b 0 0 0 5 ^ 4 B | A 198 S Typenreihe/Type range A198S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsSpitzensperrspannung Periodische RückwärtsU r rm Spitzensperrspannung Rückwärts-Stoßspitzenspannung

A198S

Abstract: DIN 41814-151A4 A118 Y10V
Contextual Info: A198S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties kMaximum rated values Periodische VorwärtsSpitzensperrspannung repetitive peak forward off-state voltage t, = -4o”C.t,., vDRM 600,800 V 1000,1100 v 1200,1300* V Vorwärts-Stoßspitzenspannung

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

Contextual Info: Ultra subminiature Pushbutton Switch A9PS Ultra subminiature size. • Gold-plated clip contact ensure high reliability. ■ The sealed bottom prevents flux penetration. ■ Washable, equivalent to IP64 IEC-60529 . ■ A9PS is smaller than A9P. Height: A9P 13.3mm, A9PS 10.5mm (30% smaller than A9P)

24c16 eeprom resetting only circuit diagram and d

Abstract: a180, transformer atmel 24c16 SAA7322 intel core i3 MOTHERBOARD CIRCUIT diagram mba mini projects SB82371SB TriMedia TM-1000 ATMEL 220 24C16 trimedia tm1300
Contextual Info: INTEGRATED CIRCUITS TM-1300 Media Processor Product Specification Supersedes data of 2000 May 30 File under INTEGRATED CIRCUITS, TR1 2000 Sep 30 Terms and Conditions TERMS AND CONDITIONS Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes,

2SA1980G

Abstract: 2SA1980Y a1980
Contextual Info: MCC TM Micro Commercial Components A1980-O A1980-Y A1980-G A1980-L
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x x x • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC631

Abstract: 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2SA1980

Abstract: Transistor TRANSISTOR a1980 a1980 transistor 2sa1980 2SC5343
Contextual Info: A1980 Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343 Ordering Information

MM2102

Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I

2SA430

Abstract: 987T1 988T1 989T1 2SA316 OC304 2SA315 transistor 2N222 2SA314 2SA348
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

BZX75C1V4

Abstract: SAA3004
Contextual Info: D E V E LO P M E N T SAMPLE D A T A SAA3004 T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ad e a v a ila b le f o r e v a lu a tio n , I t does n o t necessanty im p ly th a t th e d e v ic e w ill go in to regular p r o d u c tio n ,

a42 a331

Abstract: omap 310 TMS320C55x CSL USB VLYNQ C6000 OMAP5912 SPRU375 TMS320C6000 stt a227 a44 a331
Contextual Info: OMAP5912 ARM Chip Support Library Reference Guide Literature Number: SPRU816 August 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any

a1980

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# A1980 Features • • • • Low Collector Saturation Voltage: VCE sat =0.3V(Max.) Low Output Capacitance: Cob=4.0pF(Typ.) Complementary Pair With 2SC5343

a1980

Abstract: 2SA1980Y
Contextual Info: MCC TM Micro Commercial Components A1980-O A1980-Y A1980-G A1980-L
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x x x x Lead Free Finish/Rohs Compliant "P"Suffix designates