A17 CT HE NV Search Results

a17 ct he nv

Contextual Info: DS1550Y/AB DALLAS SEMICONDUCTOR Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • Data is autom atically protected during power loss • Directly replaces 512K x 8 volatile static RAM • W rite protects selected blocks of m em ory when pro­ grammed

647P

Contextual Info: D S 1647/D S1647P PRELIM INARY DALLAS SEMICONDUCTOR D S 1 6 4 7 /D S 1 6 4 7 P Nonvolatile Tim ekeeping RAM FEATURES PIN ASSIGNMENT A18 • Integrated NVS R AM , real time clock, crystal, p o w e rfail control circuit and lithium energy source • Clock registers are accessed identical to the static

256K-2M

Abstract: 29206* intel
Contextual Info: Intel APPLICATION BRIEF AB-25 May 1990 Designing In Flexibility With A Universal Memory Site 6 DALE ELBERT APPLICATIONS ENGINEERING Order Number: 292061-001 6-365 DESIGNING IN FLEXIBILITY WITH A UNIVERSAL MEMORY SITE CONTENTS page INTRODUCTION. 6 -3 6 7

Contextual Info: DS1252Y PR E LIM IN A R Y DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time d o ck keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years RST ! i 32 1 V cc A16 12 31 1 A15

Contextual Info: DS 1251Y DALLAS SEMICONDUCTOR DS1251Y 4096K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time d o ck keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years A18/RST ! i 32 1 V cc 12 31 1 A15 A14 3 3 30 1 A17

1251Y

Contextual Info: DS 1251Y DALLAS SEMICONDUCTOR DS1251Y 4096K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time d o ck keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years A18/RST ! i 32 1 Vcc A16 31 1 A15 • 512K x 8 NV SRAM directly replaces volatile static

Contextual Info: DS1250W PRELIMINARY DALLAS SEMICONDUCTOR DS1250W 3.3V 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power A18 1| 1 A16 I 1 32 | 1 V c c 2 31 1I A15 A14 11 3 A12 I 1 4 • Data is autom atically protected during power loss

Contextual Info: DS1 7 5 0 Y / Y L P M PRELIMINARY DALLAS SEMICONDUCTOR DS1750Y/YLPM 3 Volt Partitionable 4 0 9 6 K NV S R A M PIN A S S IG N M E N T FEA TU R E S • D a t a r e t e n t i o n in t h e a b s e n c e o f W q q • D a t a is a u t o m a t i c a l l y p r o t e c t e d d u r i n g p o w e r l o s s

csi-2

Abstract: SM28256Z-25 SM28256Z-35
Contextual Info: ÄPR i 5 1931' SHORT SM28256Z June 1990 Preliminary HoduUrTedmologies SM28256Z 2 Mbit 256K x 8 SRAM Module General Description Features The SM28256Z is a high performance, two megabit static RAM module, organized as256K words by 8 bits, in a 60-pin, zigzag in-line package

Contextual Info: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High d ensity 4 m egabit and 8 m egabit sta tic RAM m odules T he ID T 7M P V 4060 is a 128K x 32 sta tic RAM m odule

29LV640D

Abstract: marking code DG 00-B-5 29LV641 amd am29lv641 29LV640DU
Contextual Info: ADVANCE INFORMATION “ “ “ “ “ A Am29LV640DU/Am29LV641 DU M D i l 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Mem ory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ Versatilel/O (V,/0) control

M30624FGFP

Abstract: ah p94 85-RL ta435 TX01 P86-P87 CT91
Contextual Info: Report No, MSR-99~04Z3 JL RELIABILITY REPORT MI TSUBISHI SEMICONDUCTOR DEVICE SINGLE CHIP 16-BIT MICROCOMPUTER TYPE M3Û624FGFP April. 1999 MITSUBISHI ELECTRIC CORPORATION JAPAN M30624FGFP RELIABILITY TEST REPORT This report presents the reliability test results for the M30624FGFP.

A15C

Abstract: CY62147V CY62147V18
Contextual Info: C Y 62147V M oBL C Y 62147V 18 M oB L2™ V CYPRESS 256K x 16 Static RAM Features pins I/Oq throu gh I/0 15 are placed in a h igh -im pe da nce s tate w hen: d e selected (CE HIG H), ou tp u ts are disabled (OE HIG H), BHE and BLE_are disabled (BHE, BLE HIG H), o r d u r­

VMIVME 4140

Abstract: VMEbus Handbook MVME 322 VMIVME-4140 TS 4140 S2A00 MVME 2A00 2A01 S000
Contextual Info: VMIVME-4140 32-Channel 12-bit Analog Output Board Product Manual 12090 South Memorial Parkway Huntsville. Alabama 35803-3308. USA A GE Fanuc C om pany 256 880-0444 ♦ (800)322-3616 ♦ Fax: (256) 882-0859 500-004140-000 Rev. D 12090 South Memoria! Parkway

marking code DG

Contextual Info: ADVANCE INFORMATION """""" A Am29LV640DU/Am29LV641 DU M D J 1 64 M egabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash M em ory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations

23c16000w

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The /xPD23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 words by 16 bits).

ds1255

Abstract: DS1255Y
Contextual Info: DS1265 Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1 265Y/ AB 8M Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC 11 A18 I 1

Contextual Info: D S 1270Y/A B DALLAS SEMICONDUCTOR FEATURES PIN A S S I G N M E N T • 5 years m inim um data retention in the absence of external power • Data is autom atically protected during power loss • Unlimited write cycles • L o w -p o w e r CM OS operation

29lv641

Contextual Info: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations

Contextual Info: b b q 4 0 1 5 /b q 4 0 1 5 Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4 ,1D4,304-bit static RAM organized as 524,288 words by 8 bits. The intégral control circuitry and lithium

a1718

Contextual Info: fax id: 2045 CYM1946 512K x 32 Static RAM Module Features • H ig h -d e n s ity 16 -m e g a b it S R A M m o d ule • 32 -b it S tan d ard F o o tp rin t su p p o rts d e n s itie s from 16K x 32 th ro u g h 1M x 32 • H ig h -s p e ed S R A M s co n stru cte d from 16 128K x 8 S R A M s in SO J packages

032XM

Contextual Info: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

Contextual Info: PRELIMINARY AMD* A m 2 9 L V 1 1 6 B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards