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    A13 TRANSISTOR Search Results

    A13 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    A13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Mali-400

    Contextual Info: Allwinner Technology CO., Ltd. A13 User Manual V1.2 2013.01.08 A13 Allwinner Technology CO., Ltd. A13 Revision History Version Date Author V1.0 2012.04.16 Initial version V1.1 2012.10.25 Modify SDRAM/NAND module descriptions V1.2 2013.1.8 A13 User Manual V1.2


    Original     		Mali-400 Mali-400 PDF

    2sk303

    Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
    Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4


    OCR Scan     		2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 2SK283 sk184 SK174 2SK436 2SK848 P/N146071 2sd22 PDF

    DS87C520

    Abstract: DS87C530
    Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 5/1/98 Subject: PRODUCT CHANGE NOTICE - D82202 Description: DS87C520 / DS87C530 revision change from A12 to A13


    Original     		D82202 DS87C520 DS87C530 actyywwA13, PDF

    MPSA13M

    Abstract: MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13
    Contextual Info: MPS-A13 SILICON MPS-A14 NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for pre-amplifier input applications requiring high input impedance. • High D C Current Gain @ lc - 10 m A d c hFE = 5,000 (Min) M P S-A 1 3


    OCR Scan     		MPS-A13 MPS-A14 100/uAdc MPSA13M MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13 PDF

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Contextual Info: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n PDF

    MPS A13 transistor

    Abstract: transistor mps 13 MPS-A13 MPS-A14 Transistor MPSA13 MPSA13
    Contextual Info: Silicon r - 'x j Darlington Transistor M P S -A 1 3 M P S -A 1 4 The General Electric MPS-A13, A 14 are Silicon Planar Epi­ taxial Passivated NPN Darlington Transistors designed for preamplifier input applications where high impedance is a requirement. absolute maximum ratings: TA = 25°C unless otherwise sp


    OCR Scan     		MPS-A13 MPS-A14 MPS-A13, 10Vdc) MPS A13 transistor transistor mps 13 MPS-A14 Transistor MPSA13 MPSA13 PDF

    MPSA13

    Contextual Info: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .


    OCR Scan     		MPS-A15Â MPS-A14 MPS-A66 MPS-A13 MPS-A14 mps-a65 mps-a66 1500c 100kHz MPS-A13, MPSA13 PDF

    27256 EPROM

    Abstract: EVQV
    Contextual Info: t 28 — A I2 — 2 27 — A7 — 3 2 6 -A13 V dd CMOS 32,768-Word by 8-Bit LSI Static ROM A6 — 4 25 -AS A9 — 9 24 -A 9 Features: A4 — 6 23 - AH A3 — 7 22 -O E /O E A2 — 8 21 -A IO 9 2 0 - 5 E /C E • A synchronous operation


    OCR Scan     		CDM53256 ------A13 28-pin CDM53256 92CM-3S216R1 27256 EPROM EVQV PDF

    mpsa14

    Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic


    Original     		MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz DS11111 mpsa14 PDF

    Hitachi DSA00276

    Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210B (Z) Rev. 2.0 Apr. 16, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM62V8512C 512-kword ADE-203-1210B 525-mil 400-mil D-85622 Hitachi DSA00276 PDF

    T3D+53

    Abstract: t3d 05 T3D 53
    Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type


    OCR Scan     		PSD51 PSD54 PSH81 PSL51 O-226AA/STYLE T3D+53 t3d 05 T3D 53 PDF

    Hitachi DSA002730

    Contextual Info: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212A (Z) Rev. 1.0 Mar. 5, 2001 Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM628512C 512-kword ADE-203-1212A 525-mil 400-mil 600-mil D-85622 Hitachi DSA002730 PDF

    HM62V8512C

    Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA00358
    Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210A (Z) Rev. 1.0 Jan. 31, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM62V8512C 512-kword ADE-203-1210A 525-mil 400-mil HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA00358 PDF

    TP5114

    Abstract: tp5115 PJ99 TP5021 J174 TPU304 TP3994 TP4381 TP5018 TP5019
    Contextual Info: SPRAGUE/SENICOND 8 5 1 4 0 1 9 S P R A G U E . GROUP T3 D • 0513050 S E M I C O N D S / I C S 9 3 D GQD3bG4 0 3 6 0 4 1 ■ J> - 7 ^ 2 .7 - z .s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C


    OCR Scan     		TP3994 TP4381 TP5018 TP5019 O-226AA/STYLES TP5114 tp5115 PJ99 TP5021 J174 TPU304 PDF

    HM6216255HI

    Abstract: HM6216255HJPI HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15 Hitachi DSA00358
    Contextual Info: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high


    Original     		HM6216255HI 256-kword 16-bit) ADE-203-1037A 256-k 16-bit. 400-mil 44-pin HM6216255HJPI HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15 Hitachi DSA00358 PDF

    HM62W1400H

    Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00276
    Contextual Info: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    Original     		HM62W1400H ADE-203-773E 400-mil 32-pin 400-mil HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00276 PDF

    2N3820

    Abstract: TP2609 MPF111 TP3331 MPF110 MPF112 MPF820 NJ32 TPBC264A TPBC264B
    Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SPRAGUE. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 93D 03603 T J> T ï'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS Limits


    OCR Scan     		MPF110 MPF111 MPF112 MPF820 2N3820 TP2609 TP3331 NJ32 TPBC264A TPBC264B PDF

    HM6216255HC

    Abstract: HM6216255HCJP-10 HM6216255HCLJP-10 HM6216255HCLTT-10 HM6216255HCTT-10 Hitachi DSA00358
    Contextual Info: HM6216255HC Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1196 (Z) Preliminary Rev. 0.0 Oct. 31, 2000 Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		HM6216255HC 256-kword 16-bit) ADE-203-1196 256-k 16-bit. 400mil 44-pin 400-mil HM6216255HCJP-10 HM6216255HCLJP-10 HM6216255HCLTT-10 HM6216255HCTT-10 Hitachi DSA00358 PDF

    TP4119

    Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
    Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*


    OCR Scan     		0D03bQ0 TP3369 TP3370 TP3458 91-ao O-226AA/STYLES TP4119 2n3819 field-effect transistors nj132 TP3823 TP4392 2N3819 NJ16 NJ32 PDF

    44P0K

    Abstract: R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR
    Contextual Info: R1RW0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		R1RW0416D 256-kword 16-bit) REJ03C0107-0100Z 16-bit. R1RW0416D 400-mil 44-pin 44P0K R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR PDF

    HM62W1400H

    Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA0044
    Contextual Info: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    Original     		HM62W1400H ADE-203-773E 400-mil 32-pin 400-mil Equa50 HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA0044 PDF

    HM62W16255HC

    Abstract: HM62W16255HCJP-10 HM62W16255HCLJP-10 HM62W16255HCLTT-10 HM62W16255HCTT-10 Hitachi DSA00358
    Contextual Info: HM62W16255HC Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1200 (Z) Preliminary Rev. 0.0 Sep. 1, 2000 Description The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		HM62W16255HC 256-kword 16-bit) ADE-203-1200 16-bit. 400-mil 44-pin HM62W16255HCJP-10 HM62W16255HCLJP-10 HM62W16255HCLTT-10 HM62W16255HCTT-10 Hitachi DSA00358 PDF

    HM62W16255H

    Abstract: HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA0044
    Contextual Info: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-751D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high


    Original     		HM62W16255H 256-kword 16-bit) ADE-203-751D 16-bit. 400-mil 44-pin HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA0044 PDF

    HM62W16255H

    Abstract: HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA00200
    Contextual Info: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-751D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    Original     		HM62W16255H 256-kword 16-bit) ADE-203-751D 16-bit. 400-mil 44-pin HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA00200 PDF