A13 MARKING CODE Search Results
A13 MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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A13 MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MMBD1503
Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
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Original |
ot-23mmbd1501mmbd1503mmbd1504+9 | |
Honda Tsushin Connectors
Abstract: RMC connectors
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OCR Scan |
rmc-eb32f-bsla-a23b23-bsla-a13b13-bsla-a12b12+4 | |
RMC connectorContextual Info: ^P O LA R IZ A T IO N ^ KEY POS. PART NO. KEY POS. MARKING R M C -E 15 FB— BSLA3N— MA23 RMC— E15FB— BSLA3N— MA13 RMC— E15FB— BSLA3N— MA12 RMC— E15FB— BSLA3N— MA 23 13 12 A23 A13 A12 A MATING CONNECTOR R M C -E A 15M Y -0M ( )-M A 1 |
OCR Scan |
e15fb--15my--46nyl0n15pos+1 | |
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Contextual Info: ADVANCE MT28SF002 256K x 8 FLASH MEMORY 256K x 8 S m artV o lta g e FEATURES 40-Pin TSOP Type I FB-1 A16 A15 A14 A13 A12 A11 A9 A8 WE RP V pp WP NC A7 A6 A5 A4 A3 A2 A1 MARKING • Tim ing (5V V cr/3.3V Vcc) 60ns/90ns access -6 80ns/110ns access -8 100ns/150ns access |
OCR Scan |
mt28sf002100ns110ns150ns+2 | |
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Contextual Info: KEY POS. MARKING DATE CODE SEE TABLE #1 ri 1 _ _ j 7 i “ i L_ 1 CONTACT DFTATI NOTE 1. CONTACT PLATING CONTACT AREA: GOLD 0. If/m MIN. OVER PALLDIUM/NICKEL 9:1 1m MIN. TERMINAL AREA: GOLD UNDERPLATING: NICKEL 1 Aim MIN. 2. APPLICABLE CABLE O.D. : 3 - 3 . 5mm |
OCR Scan |
-0001c-brmc-e15f4s-lc5-mrmc-e15f4s-lc5lg-mrmc-e15f4s-lc5+3 | |
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Contextual Info: SMD Other Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF Max. Reverse Current @ VR VRRM (V) VF (V) IF (mA) IR (µA) VR (V) Max. Diode Max. Reverse CapaciRecovery tance Pinout Package @1MHz Diag. Time 0V CT |
Original |
mmbd1501ammbd1503ammbd1504ammbd1505a | |
application checklistContextual Info: Introduction to Hermetic Connectors Hermetic Connector Designer’s Application Checklist A Name Company Name Address City and State Country and Postal Code/Zip Telephone E-mail Specification Reference: Pressure Requirement PSI : MIL-DTL-38999 MIL-DTL-83513 |
Original |
mil-dtl-38999mil-dtl-83513mil-dtl-5015mil-dtl-24308+4 | |
M24758Contextual Info: MIL-PRF 24758A MIL-PRF-24758-* EMI/EMP Shielding Conduit with Glenair BlueJacket Basic Number Conduit Size Code Table I M24758 - G 1 A High Temp Option (See Note 4) Omit for Standard H BlueJacket Wire overbraid Core A Minimum bend radius B TABLE I CONDUIT SIZE |
Original |
4758amil-prf-24758-m24758m24758-+1 | |
a15 diode
Abstract: diode MARKING CODE a13 MMBD1503A sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13
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Original |
mmbd1501a/1503a/504a/1505ammbd1501ammbd1503a+12 | |
MOSFET A13Contextual Info: TSM6NB60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 600 1.6 @ VGS =10V 6 Features Block Diagram ● Advanced high dense cell design. ● High Power and Current handing capability. |
Original |
tsm6nb60o-220ito-220tsm6nb60cz+3 | |
A13 MARKING CODE
Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
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Original |
tsc5802do-251o-252tsc5802dch+8 | |
power transistor Ic 4A NPN to - 251
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
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Original |
tsc5804do-251o-252tsc5804dch+6 | |
TSH251
Abstract: hall MARKING 251
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Original |
tsh251o-92stsot-23hall marking 251 | |
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Contextual Info: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
tsp20u60sj-std-0202011/65/eu2002/96/ec+3 | |
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Contextual Info: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
tsp15u50sj-std-0202011/65/eu2002/96/ec+3 | |
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Contextual Info: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
tsp10u60sj-std-0202011/65/eu2002/96/ec+3 | |
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Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
tsp10u45sj-std-0202011/65/eu2002/96/ec+3 | |
A13 MARKING CODE
Abstract: SS98 TT100 TT241 UU215 MARKING D17 F16 SMA 686 A14
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Original |
tt100tt240tt241uu102+11 | |
R6S05Contextual Info: TMBR6S05 Silicon Bridge Rectifiers TMB Small Signal Features ◇ Ultra low leakage current IR < 2 A, TA = 125 oC ◇ No solder used, real fully in line with lead free ◇ Package thickness is 1.2 mm ◇ High ESD > 12 KV HBM model ◇ Plastic material has U/L flammability classification 94V-0 |
Original |
tmbr6s05c/10sr6s05 | |
D42030
Abstract: eprom 27C512 27C512 CXP86212 CXP86216 CXP86400 CXP86490 CXP86324 XTAL 16MHZ IC marking code D3
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Original |
cxp86400/86490cxp86440/86448/86460cxp86400cxp86490+12 | |
A12 marking
Abstract: diode MARKING CODE A9 osd font 27C512 eprom A11 MARKING CODE diode MARKING A9 eprom 27C512 27C512 CXP85840A CXP85848A
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Original |
cxp85890acxp85840a/5848a/5856a+13 | |
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Contextual Info: SM320C32ĆEP DIGITAL SIGNAL PROCESSOR SGUS038 − AUGUST 2002 D Controlled Baseline D D D D D D D D D D D D D SMJ320C30 and SMJ320C31 Object Code − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing |
Original |
sm320c32sgus038smj320c30smj320c31+5 | |
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Contextual Info: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer |
Original |
ts13005cko-12650pcs | |
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Contextual Info: SM320C32ĆEP DIGITAL SIGNAL PROCESSOR SGUS038 − AUGUST 2002 D Controlled Baseline D D D D D D D D D D D D D SMJ320C30 and SMJ320C31 Object Code − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing |
Original |
sm320c32sgus038smj320c30smj320c31+5 | |