A114 MOSFET Search Results

WDFN8

Abstract: NTTFS3A08P
Contextual Info: NTTFS3A08P Product Preview Power MOSFET −20 V, −14 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114

Contextual Info: NTLUD3A50PZ Power MOSFET −20 V, −5.6 A, mCoolt Dual P−Channel, 2.0x2.0x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low RDS on Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving

NTTFS3A08PZTAG

Contextual Info: NTTFS3A08PZ Power MOSFET −20 V, −15 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114

Contextual Info: NTTFS3A08P Power MOSFET −20 V, −15 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

transistor A114

Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

221D-03

Contextual Info: NDF11N50Z, NDP11N50Z Product Preview N-Channel Power MOSFET 500 V, 0.52 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com

Contextual Info: NTLJS3A18PZ Product Preview Power MOSFET −20 V, −8.4 A, mCoolt Single P−Channel, 2.0x2.0x0.8 mm WDFN Package http://onsemi.com Features • WDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile WDFN 2.0x2.0x0.8 mm for Board Space Saving

Contextual Info: PI3PD22924C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22924C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.

Contextual Info: PI3PD22924C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22924C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.

MRF6V2300N

Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

hatching machine

Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

Contextual Info: NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A

Contextual Info: PI3PD22925C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22925C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.

NDF10N62Z

Contextual Info: NDF10N62Z N-Channel Power MOSFET 620 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS

Contextual Info: NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

Contextual Info: NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 2 A

MRF6V2300NB

Abstract: transistor A113 MRF6V2300N
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

NIPPON CAPACITORS

Abstract: capacitor mttf 100B120JP 100B180JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

NDF10N60ZG

Abstract: 221D A114 JESD22 NDP10N60Z
Contextual Info: NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

ndf05n50

Contextual Info: NDF05N50ZH Product Preview N-Channel Power MOSFET 500 V, 1.5 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 2.2 A

Contextual Info: NDF10N60ZH Product Preview N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

221D

Abstract: A114 mosfet 620
Contextual Info: NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted