A10 BGA Search Results

MC68000

Abstract: datasheet MC68000 MC68HC001 A10-A11
Contextual Info: MC68HC001 MC68000/MC68010/MC68HC000 K K NC FC2 FC0 A1 A3 A4 A6 A7 A9 MODE FC2 FC0 NC A1 A3 A4 A6 A7 A9 NC BERR IPL0 FC1 NC A2 A5 A8 A10 A11 A14 J J BERR IPL0 FC1 NC A2 A5 A8 A10 A11 A14 H H E IPL2 IPL1 E IPL2 IPL1 A13 A12 A16 A13 A12 A16 G G VMA VPA VMA VPA

MC68360

Contextual Info: MC68360 BGA PIN ASSIGNMENT C 1997 Motorola PIN NAME PIN NAME A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 NC NC CAS1/IACK2 NC DSACK0/TB1 PRTY2/IOUT0/RQOUT PRTY0/IOUT2 IPIPE1/RAS1DD/BCLRI NC NC1 BR IRQ4/IOUT1 RESETh TDI RMC/CONFIG0/LOCK BERR/TEA

Contextual Info: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10

D4136

Abstract: m 208 b1 PQFP ALTERA 160 EPM7256A EPM7256AE EPM7256E EPM7256S EPM7512AE m64196 L6M15
Contextual Info: EPM7256A and EPM7256AE Dedicated Pin-Outs ver. 1.0 Dedicated Pin 100-Pin TQFP 100-Pin FineLine BGA INPUT/GCLK1 87 A6 INPUT/GCLRn 89 B5 INPUT/OE1 88 B6 INPUT/OE2/GCLK2 90 A5 TDI 1 4 A1 TMS (1) 15 F3 TCK (1) 62 F8 TDO (1) 73 A10 GNDINT 38, 86 D6, G5 144-Pin TQFP 208-Pin PQFP 256-Pin FineLine BGA

Contextual Info: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10

DH11

Abstract: DH21 DH23 b09 n03 DH19 dh17 A09 N03 Dh14 dh28 Dh29
Contextual Info: OFFICIAL - 9/17/97 CBGA Footprints Rev. F 603 Family CBGA C16 E04 D13 F02 D14 G01 D15 E02 D16 D04 E13 G02 E15 H01 E16 H02 F13 J01 F14 J02 F15 H03 F16 F04 G13 K01 G15 K02 H16 M01 J15 P01 L02 K04 C01 B04 B03 B02 A04 B07 J04 A10 L01 B06 E01 D08 A06 D07 B01 B05

S1A14

Abstract: S1d9 225-pin BGA Socket S1g4 XC73108 S1-K14 S1G15 HW-133 S1D5 S1D-13
Contextual Info: ZONE REV 01 P1 TTL0 TTL3 A2 TTL6 A3 TTL9 A4 AID6 D3 D2 D1 D0 S1-M15 S1-N14 S1-P14 S1-N12 A5 TTL1 B2 TTL7 B3 TTL10 B4 TTL12 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13

VMD32

Abstract: R526
Contextual Info: 1 2 3 4 5 6 7 8 BWP BCA11 BCA10 BCA25 BCA12 BCA24 BCA15 BCA23 BCA16 BCA22 BCA21 BCA20 BCA14 BCA19 BCA13 BCA18 BCA8 BCA17 BCA9 U6 T8 T16 T13 T11 R6 R15 P5 P16 M16 D11 D10 C10 B10 A10 D9 C9 B9 A9 D8 C8 B8 A8 E7 D7 C7 B7 A7 E6 D9 3,7,20 2 AGP_BUSY# 1 G_REQ# 3

G4-G15

Abstract: MC68360
Contextual Info: MC68360 PGA PIN ASSIGNMENT C 1997 Motorola PIN NAME PIN NAME A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 XTAL NC3 A26 A24 A21 A18 A15 A12 A11 A9 A6 A3 A2 TRIS/TS CS6/RAS6 CS3/RAS3 CS0/RAS0 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15

diode t25 4 B9

Abstract: transistor af18 socket s1 diode t25 4 d9
Contextual Info: P1 TTL0 D3 A1 TTL3 A2 TTL6 A3 TTL9 P1 D2 D1 D0 A4 S1-W2 S1-AA4 S1-AD3 S1-AE3 TTL1 P1 D4 B1 TTL4 B2 TTL7 B3 TTL10 B4 AID6 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 +5V B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 S1-U2 S1-R2 D6 TDI TTL2

MCP 256M nand toshiba

Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Contextual Info: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package

db3 bl

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Mar. 07, 2008) - Modify DC spec. - Modify tSAC and tSHZ timing

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007

ED07

Abstract: ED16-23 TMS320C671
Contextual Info: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

IC42S16101

Abstract: tCKA
Contextual Info: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B 0C 0D 0E Initial Draft Change tOH from 2.5 ns to 2.2 ns Add 60 ball(16M SDRAM) VF-BGA package Add Pb-free package Add speed grade -5ns Obselte speed grade -8ns

ED16-23

Abstract: TMS320C TMS320C6000 WED3DL328V
Contextual Info: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

Contextual Info: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008 Revision : 1.1 1/46 ESMT Preliminary

TMS320C6000

Abstract: TMS320C6202 ED07
Contextual Info: WED3DL324V 4Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in

MAKING A10 BGA

Abstract: 90 ball VFBGA
Contextual Info: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Revision 1.2 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns)

4MX32

Abstract: a106a7
Contextual Info: WED3DL324V 4Mx32 SDRAM FEATURES DESCRIPTION n 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and

M52D32321A

Contextual Info: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (May. 03, 2007) - Modify DC Characteristics Revision 1.3 (May. 14, 2007) - Modify tSS (1.5ns => 2.5ns) and tSH(1ns => 1.5ns)

Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119

bt 2323

Abstract: d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 4MX32 WED3DL324V10BI
Contextual Info: WED3DL324V White Electronic Designs 4Mx32 SDRAM FEATURES n n n n n n n DESCRIPTION 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer

M52D32321A

Contextual Info: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (May. 03, 2007) - Modify DC Characteristics Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2.5ns) and tSH(1ns => 1.5ns)