A10 BGA Search Results

MC68360

Contextual Info: MC68360 BGA PIN ASSIGNMENT C 1997 Motorola PIN NAME PIN NAME A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 NC NC CAS1/IACK2 NC DSACK0/TB1 PRTY2/IOUT0/RQOUT PRTY0/IOUT2 IPIPE1/RAS1DD/BCLRI NC NC1 BR IRQ4/IOUT1 RESETh TDI RMC/CONFIG0/LOCK BERR/TEA

Contextual Info: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10

D4136

Abstract: m 208 b1 PQFP ALTERA 160 EPM7256A EPM7256AE EPM7256E EPM7256S EPM7512AE m64196 L6M15
Contextual Info: EPM7256A and EPM7256AE Dedicated Pin-Outs ver. 1.0 Dedicated Pin 100-Pin TQFP 100-Pin FineLine BGA INPUT/GCLK1 87 A6 INPUT/GCLRn 89 B5 INPUT/OE1 88 B6 INPUT/OE2/GCLK2 90 A5 TDI 1 4 A1 TMS (1) 15 F3 TCK (1) 62 F8 TDO (1) 73 A10 GNDINT 38, 86 D6, G5 144-Pin TQFP 208-Pin PQFP 256-Pin FineLine BGA

Contextual Info: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10

S1A14

Abstract: S1d9 225-pin BGA Socket S1g4 XC73108 S1-K14 S1G15 HW-133 S1D5 S1D-13
Contextual Info: ZONE REV 01 P1 TTL0 TTL3 A2 TTL6 A3 TTL9 A4 AID6 D3 D2 D1 D0 S1-M15 S1-N14 S1-P14 S1-N12 A5 TTL1 B2 TTL7 B3 TTL10 B4 TTL12 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13

diode t25 4 B9

Abstract: transistor af18 socket s1 diode t25 4 d9
Contextual Info: P1 TTL0 D3 A1 TTL3 A2 TTL6 A3 TTL9 P1 D2 D1 D0 A4 S1-W2 S1-AA4 S1-AD3 S1-AE3 TTL1 P1 D4 B1 TTL4 B2 TTL7 B3 TTL10 B4 AID6 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 +5V B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 S1-U2 S1-R2 D6 TDI TTL2

MCP 256M nand toshiba

Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Contextual Info: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007

Contextual Info: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date Remark 0A 0B 0C 0D Initial Draft Change tOH from 2.5 ns to 2.2 ns Add 60 ball(16M SDRAM) VF-BGA package Add Pb-free package August 28,2001 April 15,2002

IC42S16101

Abstract: tCKA
Contextual Info: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B 0C 0D 0E Initial Draft Change tOH from 2.5 ns to 2.2 ns Add 60 ball(16M SDRAM) VF-BGA package Add Pb-free package Add speed grade -5ns Obselte speed grade -8ns

Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119

M52D32321A

Contextual Info: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (May. 03, 2007) - Modify DC Characteristics Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2.5ns) and tSH(1ns => 1.5ns)

Contextual Info: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by

Contextual Info: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Revision 1.2 (16 Jan. 2008) - Add 8x10mm BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008

100MHZ

Abstract: 133MHZ WED3DL644V
Contextual Info: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by

100MHZ

Abstract: 133MHZ 8MX32 WED3DL328V
Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer

M13S64164A

Contextual Info: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007

Contextual Info: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by

Contextual Info: ESMT M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Revision 0.4 (01 Oct. 2007) - Modify IDD spec. Revision 1.0 (20 Nov. 2007) - Delete “Preliminary”

Contextual Info: ESMT M12L32321A Revision History Revision 0.1 Sep. 15 2006 -Original Revision 0.2 (Dec. 05 2006) -Add -5.5 & -6BG spec Revision 0.3 (Mar. 02 2007) - Delete BGA ball name of packing dimensions Revision 0.4 (May. 03 2007) - Modify DC Characteristics Revision 0.5 (Jun. 08 2007)

Contextual Info: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Mar. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min), and tSHZ(max)

Contextual Info: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007

Contextual Info: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Mar. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min), and tSHZ(max)

Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics