A1 SOT-223 MOSFET Search Results

mosfet L 3055

Abstract: 3055 sot-223 mj 3055 A1 SOT-223 MOSFET 100T3LF NTF3055-100T1G sot 223 marking code TP NTF3055-100-D
Contextual Info: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 110 mW Features

FT960

Abstract: ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
Contextual Info: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223

5L175

Abstract: NTF3055L175 NTF3055L175T1 NTF3055L175T1G NTF3055L175T3 NTF3055L175T3G NTF3055L175T3LF
Contextual Info: NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com 2.0 AMPERES, 60 VOLTS

ft960

Abstract: MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
Contextual Info: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223

Contextual Info: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223

Contextual Info: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW

3055G

Abstract: mosfet L 3055 mj 3055 3055 sot-223
Contextual Info: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW

Contextual Info: NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

5003N

Abstract: NIF5003N NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G
Contextual Info: NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

NIF5003N

Abstract: NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G
Contextual Info: NIF5003N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

9N05A

Abstract: NIF9N05ACLT1G MARKING 117-a SOT-223 NIF9N05ACLT3G A1 SOT-223 MOSFET
Contextual Info: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped

5002n

Contextual Info: NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process

5002n

Abstract: NIF5002N NIF5002NT1 NIF5002NT1G NIF5002NT3 NIF5002NT3G NIF5002
Contextual Info: NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process

Contextual Info: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped

Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

2955g

Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

2955G

Abstract: NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10
Contextual Info: NTF2955, NTF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Packages are Available Applications • • • • Power Supplies

NVF3055

Abstract: 3055G NVF3055-100 NTF3055-100T1G
Contextual Info: NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 110 mW

Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

5P03

Abstract: NTF5P03T3G MMFT5P03HD NTF5P03T3 P-channel sot-223 ntf5p03t3 sot223
Contextual Info: NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package

Contextual Info: NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P−Channel SOT−223 http://onsemi.com Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package Avalanche Energy Specified

Contextual Info: NTF5P03T3G, NVF5P03T3G Power MOSFET 5.2 A, 30 V P−Channel SOT−223 http://onsemi.com Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package Avalanche Energy Specified

2955E

Abstract: equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.

2955e

Abstract: equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.