A0519 Search Results

Contextual Info: TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling

CL2N8-G

Abstract: A0519
Contextual Info: CL2 Simple 90V, 20mA, Temperature Compensated Constant Current LED Driver IC Features General Description ► ► ► ► The Supertex CL2 is a high voltage, temperature compensated, constant current source. The device is trimmed to provide a constant current of 20mA±10% at an input voltage of 5.0

A0519

Abstract: 2N7008
Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7008 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

EA2025

Abstract: D1717 CSR1010
Contextual Info: ¡ Ordering number : ENSK 5085A | CMOS LSI LC322271J, M, T-70/80 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview The LC 322271J, M and T is a CMOS dynamic RAM operating on a single 5 V power source and having a 131072 words x 16 bits configuration. Equipped with

Contextual Info: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

calculation of transformer differential relay setting for RET615

Abstract: RM1- 4616 motor 1MRS756887 ABB make REC 670 REU615 PCM600 abb ref615 ltc 3588 siemens s5 plc RED615
Contextual Info: Relion Protection and Control 615 series Technical Manual Document ID: 1MRS756887 Issued: 2010-09-24 Revision: E Product version: 3.0 Copyright 2010 ABB. All rights reserved Copyright This document and parts thereof must not be reproduced or copied without written

calculation of transformer differential relay setting for RET615

Abstract: ref 615 abb interposing CT transistor A968 PCM600 IDMT characteristic of REM - 615 ABB 1MAC050144-MB vn-240 pc znyn11 IDMT relay
Contextual Info: Relion Protection and Control 615 series ANSI Technical Manual Document ID: 1MAC050144-MB Issued: 01/20/2010 Revision: A Product version: 2.0 Copyright 2010 ABB. All rights reserved Copyright This document and parts thereof must not be reproduced or copied without written

2SJ538

Abstract: A0519
Contextual Info: 2SJ538 注文コード No. N A 0 5 1 9 三洋半導体データシート N 2SJ538 P チャネル MOS 型シリコン電界効果トランジスタ ロードスイッチング用 特長 ・低オン抵抗。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

125OC

Abstract: TN2425 TN2425N8-G
Contextual Info: TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

2SJ538

Contextual Info: 2SJ538 Ordering number : A0519 SANYO Semiconductors DATA SHEET 2SJ538 P-Channel Silicon MOSFET Load Switching Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings