A-29 DIODE Search Results
A-29 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
A-29 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
bridge thyristorContextual Info: VHFD 29 Half Controlled Single Phase Rectifier Bridge VRRM = 800-1600 V IdAVM = 32 A Including Freewheeling Diode and Field Diodes VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type 3 1 2 VHFD 29-08io1 VHFD 29-12io1 VHFD 29-14io1 VHFD 29-16io1 |
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29-08io129-12io129-14io129-16io1+1 | |
bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
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OCR Scan |
1n9141n41481n41501n5229+16 | |
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Contextual Info: DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns VRSM VRRM TO-263 V V 200 200 Type A DSEC 29-02AS Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM A = Anode, C = Cathode, TAB = Cathode |
Original |
29-02aso-2639-02a20070731a | |
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Contextual Info: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5 |
Original |
9-12ao-220 | |
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Contextual Info: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V Type C A TO-220 AC C 1200 1200 DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5 |
Original |
9-12ao-22020091012a | |
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Contextual Info: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V Type C A TO-220 AC C 1200 1200 DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5 |
Original |
9-12ao-22020091012a | |
LM1575HV
Abstract: LM1575HV-ADJ 5962-9167102QXA LM1575-ADJ LM1575HVKAD-QML
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Original |
mnlm1575hv-x-adjlm1575hvka04bralm1575hv-adj+3 | |
LM1575
Abstract: 5962-9167401QEA LM1575-15 LM1575J-15-QML
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Original |
mnlm1575-x-15lm1575j16arlka04bra+3 | |
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Contextual Info: MIAA20WE600TMH Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 65 A IC25 = 29 A IC25 = 29 A IFSM = 550 A VCE sat = 2.1 V VCE(sat) = 2.1 V |
Original |
miaa20we600tmhidavm25/-15v20070531a | |
Diode d4Contextual Info: MITB15WB1200TMH Converter - Brake - Inverter Module Low Loss Trench IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 90 A IC25 = 29 A IC25 = 29 A IFSM = 300 A VCE sat = 1.7 V VCE(sat) = 1.7 V |
Original |
mitb15wb1200tmhidavm25sh-15v20100906a+1 | |
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Contextual Info: □IXYS DSEP 29-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 29-03A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5 |
OCR Scan |
9-03ao-2201500cd2-31 | |
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Contextual Info: □IXYS DSEP 29-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 29-06A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5 |
OCR Scan |
9-06ao-2201500cd2-31 | |
54F378
Abstract: 54F378DM 54F378DMQB 54F378FMQB 54F378LMQB
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Original |
mn54f378-x54f37854f378dm54f378dmqb+4 | |
TF DSL
Abstract: 54F194 54F194DMQB 54F194FMQB 54F194LMQB
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Original |
mn54f194-x-55/125ctf dsl54f194+3 | |
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54ACT163
Abstract: 54ACT163E-QMLV 54ACT163ERQMLV 54ACT163J-QMLV 54ACT163JRQMLV 54ACT163W-QMLV 54ACT163WRQMLV ACT163 J163
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Original |
mv54act163-xact163modulo-1654act163+8 | |
MNLM1575-X-12
Abstract: 5962-9167301QEA 5962-9167301QZA LM1575 LM1575-12 LM1575J-12-QML LM1575K-12-QML LM1575WG-12-QML MNLM1575-12-X
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Original |
mnlm1575-12-xlm1575m0001549mnlm1575-x-12+7 | |
AN569
Abstract: MTP29N15E SMD310
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Original |
mtp29n15er14525mtp29n15e/dan569+1 | |
HL6553FGContextual Info: HL6553FG ODE-208-016C Z Rev.3 Aug. 29, 2006 Visible High Power Laser Diode Description The HL6553FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment. |
Original |
hl6553fgode-208-016c | |
BYV25D
Abstract: BYV25D-600
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Original |
byv25d-600ot428byv25d | |
4N29
Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
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OCR Scan |
e54915iec380/vde08ci6iec435/vde0805iec65/vde0860+11 | |
152 diode
Abstract: BYC20X-600
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Original |
byc20x-600od113o-220f152 diode | |
BAS56
Abstract: smd marking l5
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Original |
bas56ot143baec-q101smd marking l5 | |
PHD13005
Abstract: ballast Self-Oscillating
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Original |
phd13005ballast self-oscillating | |
34NM60Contextual Info: STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB Order codes VDS @TJ max. RDS(on) max. 3 1 STB34NM60ND |
Original |
stb34nm60ndstf34nm60ndstp34nm60ndstw34nm60nd+4 | |