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    A J16 Search Results

    A J16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11000N
    Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-PDIP -40 to 85 Visit Texas Instruments Buy
    74AC11004DW
    Texas Instruments Hex Inverters 20-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11074D
    Texas Instruments Dual Positive-Edge-Triggered D-Type Flip-Flops With Clear and Preset 14-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244PWR
    Texas Instruments Octal Buffers/Drivers 24-TSSOP -40 to 85 Visit Texas Instruments Buy
    74AC11257N
    Texas Instruments Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 20-PDIP -40 to 85 Visit Texas Instruments Buy

    A J16 Datasheets (51)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AJ-165/13-3
    Amphenol Nexus Cconnector JACK MALE 5P GOLD SLDR CUP Original PDF 2.02MB
    AJ-166/14-1
    Amphenol Nexus Cconnector JACK MALE 6P GOLD SLDR CUP Original PDF 2.02MB
    AJ-166/14-2
    Amphenol Nexus Cconnector JACK MALE 6P GOLD SLDR CUP Original PDF 2.02MB
    AJ-166/14-3
    Amphenol Nexus Cconnector JACK MALE GOLD SOLDER CUP Original PDF 2.02MB
    AJ-166/14-4
    Amphenol Nexus Cconnector JACK MALE 6P GOLD SLDR CUP Original PDF 2.02MB
    AJ-166/14-5
    Amphenol Nexus Cconnector JACK MALE 6P GOLD SLDR CUP Original PDF 2.02MB
    badge SMAJ16A
    JCET Group SMAJ series transient voltage suppressor diodes in SMAG package, 400W peak pulse power, 5.0V to 440V working peak reverse voltage, glass passivated chip, unidirectional and bidirectional types available. Original PDF
    badge SMAJ160
    Shenzhen Heketai Electronics Co Ltd SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass-passivated junctions, low inductance, fast response time below 1.0 ps, peak pulse power of 400 W, and surge current handling up to 713 A, designed for transient voltage protection. Original PDF
    badge 6AJ16CA-AU
    Jiangsu JieJie Microelectronics Co Ltd 600W transient voltage suppressor diode in SMA package, featuring 10/1000μs pulse waveform rating, low leakage current, fast response time, high surge capability, and surface mount design for board space optimization.600W transient voltage suppressor diode in SMA package with 10/1000μs pulse waveform rating, low leakage current, fast response time, and standoff voltages from 10V to 120V, suitable for surface mount applications.600W transient voltage suppressor diode in SMA package with 10/1000μs pulse waveform capability, low leakage current, fast response time, and operating temperature range from -55 to +150°C, suitable for surface mount applications.600W transient voltage suppressor diode in SMA package with 10/1000μs pulse waveform capability, low leakage current, fast response time, and standoff voltages ranging from 10V to 120V for unidirectional and bidirectional configurations. Original PDF
    badge SMAJ160A-AU
    Jiangsu JieJie Microelectronics Co Ltd 400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with peak pulse power capability of 400W at 10/1000us waveform and low leakage current.400W SMAJxx(C)A-AU Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, 400W peak pulse power at 10/1000us waveform, and fast response time, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with 10/1000μs pulse waveform rating, low leakage current, fast response time, and standoff voltages from 10V to 440V for unidirectional and bidirectional configurations. Original PDF
    badge 6AJ16A
    Jiangsu JieJie Microelectronics Co Ltd 600W transient voltage suppressor diode in SMA package with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and standoff voltages ranging from 5V to 120V for surface mount applications. Original PDF
    badge SMAJ16A
    Shenzhen Heketai Electronics Co Ltd SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A. Original PDF
    badge 6AJ16CA
    Jiangsu JieJie Microelectronics Co Ltd 600W transient voltage suppressor diode in SMA package with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and standoff voltages ranging from 5V to 120V for surface mount applications.600W transient voltage suppressor diode in SMA package, featuring 10/1000 μs pulse waveform rating, low leakage current, fast response time, and standoff voltages from 5V to 120V for unidirectional and bidirectional configurations.600W Transient Voltage Suppressor diode in SMA package with 10/1000 µs waveform rating, low leakage current, fast response time, and standoff voltages ranging from 5V to 120V for surface mount applications.600W Transient Voltage Suppressor diode in SMA package with 10/1000 µs pulse waveform rating, low leakage current, fast response time, and standoff voltages ranging from 5V to 120V. Original PDF
    badge SMAJ160CA
    JCET Group SMAJ series transient voltage suppressor diodes in SMAG package, 400W peak pulse power, 5.0V to 440V working peak reverse voltage, glass passivated chip, unidirectional and bidirectional types available.SMAJ series transient voltage suppressor diodes in SMAG package, glass passivated, 400W peak pulse power, working voltages from 5.0V to 440V, available in uni-directional and bi-directional configurations.SMAJ series transient voltage suppressor diodes in SMAG package, 400W peak pulse power, working voltages from 5.0V to 440V, unidirectional and bidirectional options, glass passivated chip for reliability.SMAJ series transient voltage suppressor diodes in SMAG package, glass passivated, 400W peak pulse power, working voltages from 5.0V to 440V, available in uni-directional and bi-directional configurations. Original PDF
    badge SMAJ16A
    Microdiode Semiconductor Surface mounted, low profile, 400W peak pulse power, 5.0-440V stand-off, 260°C/10s high temp soldering, DO-214AC/SMA case, 0.07g weight. Original PDF
    badge SMAJ16CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diodes in SMA/DO-214AC package with 400W peak pulse power, voltage range 5.0 to 440V, unidirectional and bidirectional versions, glass passivated die, fast response, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package with 400W peak pulse power, voltage range 5.0V to 440V, unidirectional and bidirectional versions, glass passivated die, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package, 400W peak pulse power, 5.0V to 440V working voltage range, unidirectional and bidirectional versions available, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package, 400W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current. Original PDF
    badge SMAJ16CA
    Shenzhen Heketai Electronics Co Ltd SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass-passivated junctions, low inductance, fast response time below 1.0 ps, peak pulse power of 400 W, and surge current handling up to 713 A, designed for transient voltage protection. Original PDF
    badge SMAJ160C
    Shenzhen Heketai Electronics Co Ltd SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass-passivated junctions, low inductance, fast response time below 1.0 ps, peak pulse power of 400 W, and surge current handling up to 713 A, designed for transient voltage protection. Original PDF
    badge SMAJ16CA
    Shikues Semiconductor Surface mount, 400W, 5.0V~440V, low profile, glass passivated, low inductance, UL flammability, SMA case, 0.055g. Original PDF
    badge SMAJ16
    Shenzhen Heketai Electronics Co Ltd SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass-passivated junctions, low inductance, fast response time below 1.0 ps, peak pulse power of 400 W, and surge current handling up to 713 A, designed for transient voltage protection. Original PDF
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    A J16 Price and Stock

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    Vishay Semiconductors SMAJ16A-E3-61

    TVS DIODE 16VWM 26VC DO214AC
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    DigiKey () SMAJ16A-E3-61 Digi-Reel 9,776 1
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    YAGEO Corporation SMAJ16A-TR13

    TVS DIODE 16VWM 26VC DO214AC
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    DigiKey () SMAJ16A-TR13 Digi-Reel 4,480 1
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    Taiwan Semiconductor SMAJ16AHR3G

    TVS DIODE 16VWM 26VC DO214AC
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    Diodes Incorporated SMAJ16CAQ-13-F

    TVS DIODE 16VWM 26VC SMA
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    TVS DIODE 16VWM 26VC DO214AC
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    DigiKey () SMAJ16A-Q Cut Tape 2,270 1
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    A J16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    metal detectors IC

    Abstract: HgCdTe metal detector sensor INSB PHOTODIODE J16PS-P6-S10M quadrant detector photodiode ge j10quad J16PS metal detector
    Contextual Info: JK EC k G JUDSOñl q Figure 29-1 Position Sensor D etector Configuration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single elem en t photodiode w ith a quadrupole electrode geom etry. T hese devices can provide lin e a r X-Y


    OCR Scan
    J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD J16Quad J10PS-M204-S05M J16QUAD-8D6-R02M J16QUAD-8D6-R05M metal detectors IC HgCdTe metal detector sensor INSB PHOTODIODE J16PS-P6-S10M quadrant detector photodiode ge j10quad J16PS metal detector PDF

    040THICK

    Contextual Info: n Silicon/Germanium "Sandwich" Detectors 0.4 to 1.8 jim Figure 8-1 Typical Responsivity for J16Si Series Description The J16Si Series two-color detector consists of a high-performance Silicon detector mounted in a "sandwich" configuration over a Germanium detec­


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    J16Si 800nm 1300nm 300Hz -5A4-R02M -8A4-R02M -8A4-R05M 040THICK PDF

    quadrant detector

    Abstract: detector active area size nep J16QUAD-8D6-R05M-HS
    Contextual Info: J16PS Room Temperature Germanium Position Sensors j udson Figure 35-2 Example of Position Linearity • J16PS P osition S ensors A Ge position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y beam position


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    J16PS quadrant detector detector active area size nep J16QUAD-8D6-R05M-HS PDF

    quadrant detector hgcdte

    Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
    Contextual Info: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y


    OCR Scan
    J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD UAD-8D6-R02M J16QU AD-8D6-R05M J10QUA quadrant detector hgcdte J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier PDF

    photodiode ge

    Abstract: Ge dual photodiode GE PHOTODIODE germanium photodiode PIN J16Si-5A4-R02M JD 1800 photodiode germanium TWO COLOR DETECTOR MQ 2 sensor
    Contextual Info: Silicon/Germanium "Sandwich" Detectors ¿ L egkg ju 0.4 to 1.8 ¡im Figure 8-1 Typical R esponsivity fo r J16Si Series Description T he J1 6 S i S eries tw o-color detector consists of a high-perform ance Silicon d etector m o u n te d in a "sandw ich" co nfiguration over a G erm an iu m detec­


    OCR Scan
    J16Si 800nm foi300nm-Ge 300Hz -5A4-R02M -8A4-R02M -8A4-R05M photodiode ge Ge dual photodiode GE PHOTODIODE germanium photodiode PIN J16Si-5A4-R02M JD 1800 photodiode germanium TWO COLOR DETECTOR MQ 2 sensor PDF

    mj16022

    Abstract: J16020
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16020 MJ16022 Advance Information SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching In in d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r


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    J16020 MJ16022 MJ16022 -400V, Tc-100 PDF

    mj16010

    Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r


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    J16010 J16012* MJ16012 MJ16010 J16012 MJW16012 AM503 P6302 MJ16012 MOTOROLA MJ16012 equivalent PDF

    MPC821

    Abstract: T7 M17
    Contextual Info: MPC821 Pin List Rev A Pin Functions (spec name) ale_a ale_b/dsck/at1 a[0] a[10] a[11] a[12] a[13] a[14] a[15] a[16] a[17] a[18] a[19] a[1] a[20] a[21] a[22] a[23] a[24] a[25] a[26] a[27] a[28] a[29] a[2] a[30] a[31] a[3] a[4] a[5] a[6] a[7] a[8] a[9] bb*


    Original
    MPC821 T7 M17 PDF

    XC4010E part marking

    Abstract: XC4010E-4CB196B 5962-97523 QML-38535 XC4010E-4CB196 5962-9752301QZC microelectronic application of rtd smd diode marking code T11 SMD transistor package code V12 MIL-PRF38535
    Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Update drawing to current requirements. Editorial changes throughout. - gap REV A A A SHEET 35 36 37 02-05-10 APPROVED Raymond Monnin REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24


    Original
    AVAILA0E-4CB196B 5962-9752301QZC XC4010E-4CB196B XC4010E part marking XC4010E-4CB196B 5962-97523 QML-38535 XC4010E-4CB196 5962-9752301QZC microelectronic application of rtd smd diode marking code T11 SMD transistor package code V12 MIL-PRF38535 PDF

    b3 pb 28

    Abstract: MPC821 t7 d-26
    Contextual Info: MPC821 Pin List Rev A Applies to Rev A MPC821 and later Updated 5/14/97 Pin Functions (spec name) ale_a ale_b/dsck/at1 a[0] a[10] a[11] a[12] a[13] a[14] a[15] a[16] a[17] a[18] a[19] a[1] a[20] a[21] a[22] a[23] a[24] a[25] a[26] a[27] a[28] a[29] a[2]


    Original
    MPC821 E5-E15 R5-R15 b3 pb 28 t7 d-26 PDF

    J16TE2-8A6R05M-SC

    Abstract: detector active area size nep TE cooled GE detector J16TE1-P6-R13M-HS J16TE2-8A6-R01M-HS
    Contextual Info: General • J16TE2 Series J1 6 T E S eries d etec to rs a re Ju d so n 's h ig h -q u ality Ge photodiodes m o u n te d on th e rm o ele ctric coolers for red u ced d a rk c u rre n t, im proved se n sitiv ity , a n d su p e rio r sta b ility . See g en e ral o p e ra tin g


    OCR Scan
    J16TE J16TE1 J16TE1 J16TE2 3030b05 J16TE2-8A6R05M-SC detector active area size nep TE cooled GE detector J16TE1-P6-R13M-HS J16TE2-8A6-R01M-HS PDF

    SKE30CA

    Abstract: cd6282 CD6282CA J170CA CD6282C CD6283
    Contextual Info: Bi-Directional TVS Mfcrgsemi r ' Part Number CD6282C 1.SKC030CA 1.SKE30CA CD6282CA SM C G 160C SM C G 160 C A SM CJ160C SM C J160CA 1.5KCD33C 1.5KE33C CD6283C SM C G 1 6 C SNICG16CA SM C J16C SM C J16C A 1.5KCD33CA 1.5KE33CA CD6283CA 1.5KCD36C 1.5KE36C CD6284C


    OCR Scan
    10/1000usec. TSB-25 SKE30CA cd6282 CD6282CA J170CA CD6282C CD6283 PDF

    J16-18A-R01M-HS

    Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
    Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­


    OCR Scan
    J16TE 3G30bGS 00D03Sb 3030b05 00GG3E7 J16-18A-R01M-HS J16-8SP-R05M-HS J16-18A-R01M germanium photodiode PDF

    Ge APD

    Abstract: J16A-18A-R100U J16A avalanche photodiodes
    Contextual Info: J}ò E G zG J U D S O N _ Ge Avalanche Photodiodes APDs 0.8 to 1.5 um Description Multiplication Characteristics T he J16A series G erm anium A va­ lan ch e P hotodiodes are designed for h ig h ­ speed applications a t 800 an d 1300 nm.


    OCR Scan
    1300nm, 30MHz 0DDD32fl Ge APD J16A-18A-R100U J16A avalanche photodiodes PDF

    Transistor mlc 8050

    Abstract: hynix nand naming rule xtal mco 8100 30591 DRIVER IC encoder 80058 MLC 8050 mlc 8050 38 mic pin configuration crc-103 80058 ENCODER MICREL MIC marking
    Contextual Info: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 1.02 — 17 March 2010 R R R LPC32x0 and LPC32x0/01 User manual D D D UM10326 D FT FT A A R R D D D R A FT D R A


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    UM10326 LPC32x0 LPC32x0/01 LPC3220, LPC3230, LPC3240, LPC3250, LPC3220/01, LPC3230/01, LPC3240/01, Transistor mlc 8050 hynix nand naming rule xtal mco 8100 30591 DRIVER IC encoder 80058 MLC 8050 mlc 8050 38 mic pin configuration crc-103 80058 ENCODER MICREL MIC marking PDF

    LPC1822FET100

    Abstract: mp3 player schematic diagram LPC1857 LPC1827 LPC1837 LPC1817FET100 LPC1850 te 2162 LPC1812 LPC1833
    Contextual Info: D D R R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D LPC18xx ARM Cortex-M3 microcontroller R A F FT FT A A R R D D User manual D Rev. 00.13 — 20 July 2011 D D D UM10430 D FT FT A A R R D D D R A FT D R


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    LPC18xx UM10430 LPC18xx, LPC1850, LPC1830, LPC1820, LPC1810, LPC1857, LPC1853, LPC1837, LPC1822FET100 mp3 player schematic diagram LPC1857 LPC1827 LPC1837 LPC1817FET100 LPC1850 te 2162 LPC1812 LPC1833 PDF

    PNX1005

    Abstract: TM3282 PNX1005E PNX1004E BGA417 PNX1002 PNX1004 NXP DAB ps usb sd IP wiring diagram of cctv camera
    Contextual Info: A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D Objective data sheet D Rev. 01.04-C — 11 May 2009 R R R R R Media processor D D D D D PNX1002; PNX1004; PNX1005 D FT FT A A R R D D D R A


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    PNX1002; PNX1004; PNX1005 PNX1005 TM3282 PNX1004 PNX100. PNX1005E PNX1004E BGA417 PNX1002 NXP DAB ps usb sd IP wiring diagram of cctv camera PDF

    sata connector datasheet

    Abstract: 6 pin sata 7 6 pin sata sata sata connector sata PCB 10nF capacitor capacitor 100nf sata phy HBI-0192B
    Contextual Info: SATA Connector Pinout for the LogicTile Express 3MG V2F-1XV5 HBI-0192B board SATA connectors: SATA (J15) pin Pin name 1 2 3 4 5 6 7 GND A+ AGND BB+ GND SATA (J16) pin Pin name 1 2 3 4 5 6 7 GND A+ AGND BB+ GND PCB signal name GND SATAH_A_P SATAH_A_N GND


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    HBI-0192B) 150MHz 100nF sata connector datasheet 6 pin sata 7 6 pin sata sata sata connector sata PCB 10nF capacitor capacitor 100nf sata phy HBI-0192B PDF

    movinand emmc 4.5

    Abstract: LPC3154 EBI-D11 ARM926EJ ARM926EJ-S LPC3152 LPC3152FET208 LPC3154FET208 MOVinand spec cd 6283 cs single output circuit diagram
    Contextual Info: R R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, NAND flash controller, and audio codec R R R D D D F FT FT A A Preliminary data sheet A Rev. 0.12 — 27 May 2010


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    ARM926EJ LPC3152/3154 LPC3152/3154 ARM926EJ-S LPC3152 movinand emmc 4.5 LPC3154 EBI-D11 LPC3152FET208 LPC3154FET208 MOVinand spec cd 6283 cs single output circuit diagram PDF

    LPc3154

    Abstract: movinand 3122 adj LPC3154FET208 movinand emmc TFBGA208 aes 3595 eMMC intel emmc spec 2FTD
    Contextual Info: R R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D D D R R A FT FT FT A A R R D ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, NAND flash controller, and audio codec R R R D D D F FT FT A A Preliminary data sheet A Rev. 0.11 — 26 August 2009


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    ARM926EJ LPC3152/3154 LPC3152/3154 LPC3152 LPc3154 movinand 3122 adj LPC3154FET208 movinand emmc TFBGA208 aes 3595 eMMC intel emmc spec 2FTD PDF

    LPC24XX

    Contextual Info: D D D D D A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D Flashless 16-bit/32-bit micro; Ethernet, CAN, LCD, USB 2.0 device/host/OTG, external memory interface R R R D D D F FT FT A A Preliminary data sheet A Rev. 00.02 — 11 January 2008


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    LPC2470 16-bit/32-bit LPC2470 LPC2470, LPC24XX PDF

    Contextual Info: D D D D D A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D Flashless 16-bit/32-bit micro; Ethernet, CAN, LCD, USB 2.0 device/host/OTG, external memory interface R R R D D D F FT FT A A Preliminary data sheet A Rev. 00.03 — 29 January 2008


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    16-bit/32-bit LPC2470 LPC2470 PDF

    VIA ARM926

    Abstract: 8x8 keyboard and microcontroller interfacing 37 PIN TFT MOBILE DISPLAY 8K ARM926EJ-S PWM32 GPO04 LCD interface WITH ARM lcd N7 arm microprocessor data sheet ARM926
    Contextual Info: D D D D D A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D 16/32-bit ARM microcontroller; hardware floating-point coprocessor, USB On-The-Go, and EMC memory interface R R R D D D F FT FT A A Preliminary data sheet


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    16/32-bit LPC32x0 ARM926EJ-S ARM926-EJS LPC32x0 VIA ARM926 8x8 keyboard and microcontroller interfacing 37 PIN TFT MOBILE DISPLAY 8K PWM32 GPO04 LCD interface WITH ARM lcd N7 arm microprocessor data sheet ARM926 PDF

    cdm-9

    Abstract: LPC3250 MMU LPC32X0 ARM926EJS ARM926EJ-S lpc3250 timer 2 LCDDCLK LPC3250 RS-232 specification
    Contextual Info: D D R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D 16/32-bit ARM microcontrollers; hardware floating-point coprocessor, USB On-The-Go, and EMC memory interface R R R D D D F FT FT A A Product data sheet


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    16/32-bit LPC3220/30/40/50 ARM926EJ-S LPC3220 cdm-9 LPC3250 MMU LPC32X0 ARM926EJS lpc3250 timer 2 LCDDCLK LPC3250 RS-232 specification PDF