A 512 J Search Results

A01 monolithic amplifier

Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
Contextual Info: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec

d114

Abstract: D42 1400 B D89 SIX PIN diode D42 / 1400 D100 D101 D102 D103 D104 D105
Contextual Info: HANBit HCPMEM-512 EDO DRAM Board 512Mbyte 32M x 144-Bit organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC Part No. HCPMEM-512 GENERAL DESCRIPTION The HCPMEM-512 is a 32M x 144 bit Dynamic RAM high-density module, organized with four banks of 8M x 144 bits.

vdfpn8

Abstract: AN1995 M25P05-A
Contextual Info: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

VFQFPN8

Abstract: M25P05 M25P05-A ST10
Contextual Info: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)

transistor c3-12

Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312
Contextual Info: 0182998 ACRIAN INC ~T? j>F| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz

M25P05

Abstract: M25P05-A ST10
Contextual Info: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)

Contextual Info: CY62148EV30LL Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 55 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30LL Automotive is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

DA10

Abstract: DA16 DB10 IDT72511 IDT72521
Contextual Info: IDT72511 IDT72521 Parallel Bidirectional FIFO 512 x 18 & 1,024 x 18 FEATURES: DESCRIPTION: Two side-by-side FIFO memory arrays for bidirectional data transfers ♦ 512 x 18-Bit - 512 x 18-Bit IDT72511 ♦ 1,024 x 18-Bit - 1,024 x 18-Bit (IDT72521) ♦ 18-bit data buses on Port A side and Port B side

DS138833

Abstract: DS1388 APPLICATION "network interface cards"
Contextual Info: Rev 0; 4/05 I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM The DS1388 real-time clock RTC , supervisor, and EEPROM is a multifunction device that provides a clock/calendar, programmable watchdog timer, powersupply monitor with reset, and 512 bytes of EEPROM.

AN56

Abstract: X20C04 X20C05 X20C16
Contextual Info: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The

HM62V8512C

Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA00358
Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210A (Z) Rev. 1.0 Jan. 31, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

Contextual Info: PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1 ,0 2 4 x 1 8 IDT72511 IDT72521 In t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • Two side-by-side FIFO memory arrays for bidirectional data transfers • 512 x 18-Bit - 512 x 18-Bit IDT72511

Contextual Info: PREVIOUS DATA IMAGE SENSOR CCD area image sensor S9736 series 512 x 512 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9736 series

Contextual Info: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 |j.m Hi-CMOS process technology.

Contextual Info: CY7C1049CV33 Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive -A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1049CV33 Automotive is a high performance CMOS

FT256

Abstract: M4116 B1583 L16 eeprom DS013 FG324 PQ208 XCR3512XL DS012 W1032
Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.2 September 4, 2001 14 Advance Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

Contextual Info: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology.

24512A

Contextual Info: CAT24C512 512 kb I2C CMOS Serial EEPROM Description The CAT24C512 is a 512 kb Serial CMOS EEPROM, internally organized as 65,536 words of 8 bits each. It features a 128−byte page write buffer and supports the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.

AM7201

Abstract: AM7201-25 AM7201-35 AM7201-50 PDW028 10175G-11
Contextual Info: a Am7201 Advanced Micro Devices High Density First-In First-Out FIFO 512 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS Status flags—full, half-full, empty • ■ RAM based FIFO 512 x ^organization ■ Cycle times of 35/45/65 ns for standard products

CY7C1049CV33-8ZSXC

Contextual Info: CY7C1049CV33 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0 °C to 70 °C The CY7C1049CV33 is a high performance Complementary metal oxide semiconductor (CMOS) Static RAM organized as

D2911

Abstract: bit-slice
Contextual Info: TMS2150A 512 x 8 CACHE ADDRESS COMPARATOR D2911, M A RCH 1 982-R E V IS E D SEP TE M B E R 1990 DW, JD, OR NT PACKAGE TOP VIEW ’ACT2150A is Recommended for New Designs RESET[ 1 U Fast Address to Match Valid Delay - Two Speed Ranges: 35 ns and 45 ns 512

N15D

Abstract: AT 7312 N13C EP7212 AN187 ARM720T EP7312 SI3034 Si3035 N12c
Contextual Info: AN187 Application Note USING THE EP72/7312 TO IMPLEMENT A SOFT MODEM P.O. Box 17847, Austin, Texas 78760 512 445 7222 FAX: (512) 445 7581 http://www.cirrus.com Copyright  Cirrus Logic, Inc. 2000 (All Rights Reserved) OCT ‘00 AN187REV1 1 AN187 TABLE OF CONTENTS