A 512 J Search Results

130-174

Abstract: 13-0174
Contextual Info: Table of Contents Frequency î m h - j Type G E N E R A L 30-88 25-50 25-54 130-174 138-174 138-174 144-174 130-174 108-174 220-225 220-225 406-512 445-470 410-512 406-512 158-162 148-512 406-488 25-1000 M O B I L E "On-Glass" B aseloaded Q uarter-w ave

LM2469

Contextual Info: LM 1247 LM1247 150 MHz I2C Compatible RGB Preamplifier with Internal 512 Character OSD ROM, 512 Character RAM and 4 DACs T ex a s In s t r u m e n t s Literature Number: SNOSA28C July 11, 2011 LM1247 Semiconductor 150 MHz I2C Compatible RGB Preamplifier with Internal 512

A01 monolithic amplifier

Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
Contextual Info: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec

Q62702-B479

Abstract: bb512 DIODE 512
Contextual Info: BB 512 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8 V BB 512 Type Ordering Code tape and reel Pin Configuration 1 2 Marking Package BB 512 Q62702-B479 C white M SOD-123 A Maximum Ratings Parameter Symbol

AN1995

Abstract: M25P05-A
Contextual Info: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■

d114

Abstract: D42 1400 B D89 SIX PIN diode D42 / 1400 D100 D101 D102 D103 D104 D105
Contextual Info: HANBit HCPMEM-512 EDO DRAM Board 512Mbyte 32M x 144-Bit organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC Part No. HCPMEM-512 GENERAL DESCRIPTION The HCPMEM-512 is a 32M x 144 bit Dynamic RAM high-density module, organized with four banks of 8M x 144 bits.

vdfpn8

Abstract: AN1995 M25P05-A
Contextual Info: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

VFQFPN8

Abstract: M25P05 M25P05-A ST10
Contextual Info: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.5 July 15, 2003 14 Preliminary Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

transistor c3-12

Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312
Contextual Info: 0182998 ACRIAN INC ~T? j>F| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz

Contextual Info: MEC JLIPD42274 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The /JPD42274 is a dual-port graphics buffer equipped with a 256Kx 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit

M25P05

Abstract: M25P05-A ST10
Contextual Info: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)

CY62148E

Abstract: CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

DA10

Abstract: DA16 DB10 IDT72511 IDT72521
Contextual Info: IDT72511 IDT72521 Parallel Bidirectional FIFO 512 x 18 & 1,024 x 18 FEATURES: DESCRIPTION: Two side-by-side FIFO memory arrays for bidirectional data transfers ♦ 512 x 18-Bit - 512 x 18-Bit IDT72511 ♦ 1,024 x 18-Bit - 1,024 x 18-Bit (IDT72521) ♦ 18-bit data buses on Port A side and Port B side

EW-512 hall effect sensor

Abstract: EW-512 4518 APPLICATION CIRCUITS 512 hall 512 hall effect sensor
Contextual Info: Hybrid Hall Effect ICs EW-series EW-512 Shipped in bulk 500pcs/Bag EW-512 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 4.5~18Ｖ Hall Element Continuous

nec d28c04

Contextual Info: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

Hitachi DSA00279

Contextual Info: HM66WP18513/HM66WP36257 9M Flow Through Zero Bus Latency ZBL SRAM (HM66WP18513) 512-Kword x 18-bit (HM66WP36257) 256-Kword × 36-bit ADE-203-1285D (Z) Preliminary Rev. 0.4 Jun. 21, 2002 Description The HM66WP18513 is a synchronous fast static RAM organized as 512-Kword × 18-bit. The

2716 interface 8085

Abstract: smd transistor A8 5962-8869001JA 5962-8869001LA 5962-88690023A 5962-8869002JA 5962-8869002LA HM1-6642-9 HM1-6642B-9 HM-6642
Contextual Info: HM-6642 512 x 8 CMOS PROM March 1997 Features Description • Low Power Standby and Operating Power - ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA - ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz The HM-6642 is a 512 x 8 CMOS NiCr fusible link

DS138833

Abstract: DS1388 APPLICATION "network interface cards"
Contextual Info: Rev 0; 4/05 I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM The DS1388 real-time clock RTC , supervisor, and EEPROM is a multifunction device that provides a clock/calendar, programmable watchdog timer, powersupply monitor with reset, and 512 bytes of EEPROM.

DS138833

Abstract: "network interface cards"
Contextual Info: Rev 0; 4/05 I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM The DS1388 real-time clock RTC , supervisor, and EEPROM is a multifunction device that provides a clock/calendar, programmable watchdog timer, powersupply monitor with reset, and 512 bytes of EEPROM.

x2004

Abstract: XICOR x2004 X20C04
Contextual Info: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to

AN56

Abstract: X20C04 X20C05 X20C16
Contextual Info: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The