A 512 J Search Results

130-174

Abstract: 13-0174
Contextual Info: Table of Contents Frequency î m h - j Type G E N E R A L 30-88 25-50 25-54 130-174 138-174 138-174 144-174 130-174 108-174 220-225 220-225 406-512 445-470 410-512 406-512 158-162 148-512 406-488 25-1000 M O B I L E "On-Glass" B aseloaded Q uarter-w ave

LM2469

Contextual Info: LM 1247 LM1247 150 MHz I2C Compatible RGB Preamplifier with Internal 512 Character OSD ROM, 512 Character RAM and 4 DACs T ex a s In s t r u m e n t s Literature Number: SNOSA28C July 11, 2011 LM1247 Semiconductor 150 MHz I2C Compatible RGB Preamplifier with Internal 512

A01 monolithic amplifier

Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
Contextual Info: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec

Q62702-B479

Abstract: bb512 DIODE 512
Contextual Info: BB 512 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8 V BB 512 Type Ordering Code tape and reel Pin Configuration 1 2 Marking Package BB 512 Q62702-B479 C white M SOD-123 A Maximum Ratings Parameter Symbol

AN1995

Abstract: M25P05-A
Contextual Info: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■

d114

Abstract: D42 1400 B D89 SIX PIN diode D42 / 1400 D100 D101 D102 D103 D104 D105
Contextual Info: HANBit HCPMEM-512 EDO DRAM Board 512Mbyte 32M x 144-Bit organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC Part No. HCPMEM-512 GENERAL DESCRIPTION The HCPMEM-512 is a 32M x 144 bit Dynamic RAM high-density module, organized with four banks of 8M x 144 bits.

vdfpn8

Abstract: AN1995 M25P05-A
Contextual Info: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

VFQFPN8

Abstract: M25P05 M25P05-A ST10
Contextual Info: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.5 July 15, 2003 14 Preliminary Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

Contextual Info: NEC ¡j PD42273 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The /JPD42273 is a dual-port graphics buffer equipped with a 256Kx 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit

transistor c3-12

Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312
Contextual Info: 0182998 ACRIAN INC ~T? j>F| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz

MN301

Contextual Info: MN3000 Series M N 3010 M N 3 0 1 0 DUAL 512-STAGE LOW NOISE BBD • General description Unit: mm inch The M N 3010 is a dual 512-stage low noise BBD having a w ide dynam ic range th a t provides a signal delay o f up to 25.5msec. T w o 512-stage BBDs are integrated on the same chip w hich

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

M25P05

Abstract: M25P05-A ST10
Contextual Info: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)

CY62148E

Abstract: CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( A m Hi-CMOS process technology.

Contextual Info: CY62148EV30LL Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 55 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30LL Automotive is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

DA10

Abstract: DA16 DB10 IDT72511 IDT72521
Contextual Info: IDT72511 IDT72521 Parallel Bidirectional FIFO 512 x 18 & 1,024 x 18 FEATURES: DESCRIPTION: Two side-by-side FIFO memory arrays for bidirectional data transfers ♦ 512 x 18-Bit - 512 x 18-Bit IDT72511 ♦ 1,024 x 18-Bit - 1,024 x 18-Bit (IDT72521) ♦ 18-bit data buses on Port A side and Port B side

EW-512 hall effect sensor

Abstract: EW-512 4518 APPLICATION CIRCUITS 512 hall 512 hall effect sensor
Contextual Info: Hybrid Hall Effect ICs EW-series EW-512 Shipped in bulk 500pcs/Bag EW-512 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 4.5~18Ｖ Hall Element Continuous

nec d28c04

Contextual Info: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

Contextual Info: KAF-0261 512 H x 512 (V) Full Frame CCD Image Sensor Description The KAF−0261 Image Sensor is a high performance, charge coupled device (CCD) designed for a wide range of image sensing applications. The sensor incorporates true two−phase CCD technology,

Hitachi DSA00279

Contextual Info: HM66WP18513/HM66WP36257 9M Flow Through Zero Bus Latency ZBL SRAM (HM66WP18513) 512-Kword x 18-bit (HM66WP36257) 256-Kword × 36-bit ADE-203-1285D (Z) Preliminary Rev. 0.4 Jun. 21, 2002 Description The HM66WP18513 is a synchronous fast static RAM organized as 512-Kword × 18-bit. The