A 512 J Search Results
A 512 J Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 74AC11138NSR |
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3-Line to 8-Line Decoders/Demultiplexers 16-SO -40 to 85 |
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| 74ACT11008N |
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Quadruple 2-Input Positive-AND Gates 16-PDIP -40 to 85 |
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| 74ACT11030DE4 |
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8-Input Positive-NAND Gates 14-SOIC -40 to 85 |
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| 74ACT11240DW |
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Octal Buffers/Line Drivers With 3-State Outputs 24-SOIC -40 to 85 |
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| 74ACT11244PWR |
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Octal Buffers/Drivers With 3-State Outputs 24-TSSOP -40 to 85 |
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A 512 J Price and Stock
Murata Manufacturing Co Ltd GCM3195C2A512JA16DCAP CER 5100PF 100V C0G/NP0 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GCM3195C2A512JA16D | Cut Tape | 3,567 | 1 |
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| GCM3195C2A512JA16D | Tape & Reel | 3,552 | 4,000 |
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| GCM3195C2A512JA16D | Digi-Reel | 3,552 | 1 |
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GCM3195C2A512JA16D | 4,000 |
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Murata Manufacturing Co Ltd GRM3195C2A512JA01DCAP CER 5100PF 100V C0G/NP0 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GRM3195C2A512JA01D | Cut Tape | 2,770 | 1 |
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| GRM3195C2A512JA01D | Digi-Reel | 2,770 | 1 |
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| GRM3195C2A512JA01D | Tape & Reel | 2,770 | 4,000 |
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GRM3195C2A512JA01D | 4,000 |
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Nanmac A5-12-JTHERMOCOUPLE J TYPE BAYONET SS30 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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A5-12-J | Box | 52 | 1 |
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RCD Components Inc RSF1A-512-JTWRES 5.1K OHM 5% 1W AXIAL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RSF1A-512-JTW | Tape & Reel | 2,500 |
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Kyocera AVX Components MR065A512JAACAP CER 5100PF 50V NP0 RADIAL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MR065A512JAA | Tape & Reel | 2,500 |
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A 512 J Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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A01 monolithic amplifier
Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
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CCD412A CCD412A A01 monolithic amplifier A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier Loral linear image sensor transparent substrate Contact image sensor fairchild | |
vdfpn8
Abstract: AN1995 M25P05-A
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M25P05-A 2010h) vdfpn8 AN1995 M25P05-A | |
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Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide |
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XCR3512XL: DS081 XCR3512XL | |
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Contextual Info: CY62148EV30LL Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 55 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30LL Automotive is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device |
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CY62148EV30LL | |
DA10
Abstract: DA16 DB10 IDT72511 IDT72521
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IDT72511 IDT72521 18-Bit 18-Bit IDT72511) IDT72521) 18-to-18-bit DA10 DA16 DB10 IDT72511 IDT72521 | |
AN56
Abstract: X20C04 X20C05 X20C16
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X20C05 X20C05 AN56 X20C04 X20C16 | |
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Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.6 September 23, 2003 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide |
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XCR3512XL: DS081 XCR3512XL | |
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Contextual Info: CY7C1049CV33 Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive -A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1049CV33 Automotive is a high performance CMOS |
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CY7C1049CV33 | |
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Contextual Info: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology. |
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HM62V8512B 512-kword ADE-203-905C 525-mil 400-mil | |
AM7201
Abstract: AM7201-25 AM7201-35 AM7201-50 PDW028 10175G-11
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Am7201 Am7201 10175g-20 AM7201-25 AM7201-35 AM7201-50 PDW028 10175G-11 | |
CY7C1049CV33-8ZSXCContextual Info: CY7C1049CV33 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0 °C to 70 °C The CY7C1049CV33 is a high performance Complementary metal oxide semiconductor (CMOS) Static RAM organized as |
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CY7C1049CV33 CY7C1049CV33 CY7C1049CV33-8ZSXC | |
D2911
Abstract: bit-slice
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TMS2150A D2911, 982-R ACT2150A 300-Mil 24-Pin D2911 bit-slice | |
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Contextual Info: Œ \ H A R R HM-6642/883 IS S E M I C O N D U C T O R 512 January 1992 X 8 CMOS PROM Features Description • This Circuit Is Processed In Accordance to Mil-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6642/883 is a 512 x 8 CMOS NiCr fusible link |
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HM-6642/883 Mil-Std883 HM-6642/883 MIL-M-38510 MIL-STD-1835, GDIP3-T24 GDIP1-T24 | |
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Contextual Info: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power |
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CY7C1062DV33 16-Mbit CY7C1062DV33 I/O15) I/O16 I/O23 I/O24 I/O31, | |
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Contextual Info: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power |
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CY7C1062DV33 16-Mbit CY7C1062DV33 I/O15) I/O16 I/O23 I/O24 I/O31, 727-CY7C1062DV33-10 | |
8Mx4X16
Abstract: sodimm pinout
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8Mx4X16 512MbitSDRAM1 sodimm pinout | |
SN74ACT7804
Abstract: SN74ACT7806 SN74ACT7814 LG5C 20G22
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SN74ACT7804 SCAS204 50-pF SN74ACT7806 SN74ACT7814 300-mil 25-mil lbl723 SN74ACT7804 SN74ACT7814 LG5C 20G22 | |
SN74ACT7804
Abstract: SN74ACT7806 SN74ACT7814
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SN74ACT7804 SCAS204C 50-pF SN74ACT7806 SN74ACT7814 300-mil 25-mil Q15sks SN74ACT7804 SN74ACT7814 | |
TH58512FTContextual Info: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE 512-MBIT 64M X SILICON GATE CMOS 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks. |
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TH58512FT 512-MBIT TH58512 528-byte TH58512FT | |
HM628512BI
Abstract: HM628512BLFPI-7 HM628512BLFPI-8 HM628512BLPI-7 HM628512BLPI-8 HM628512BLRRI-7 HM628512BLRRI-8 HM628512BLTTI-7 HM628512BLTTI-8 Hitachi DSA00358
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HM628512BI 512-kword ADE-203-935C 32-pin HM628512BLFPI-7 HM628512BLFPI-8 HM628512BLPI-7 HM628512BLPI-8 HM628512BLRRI-7 HM628512BLRRI-8 HM628512BLTTI-7 HM628512BLTTI-8 Hitachi DSA00358 | |
R1RW0408D
Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
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R1RW0408D 512-kword REJ03C0111-0100Z R1RW0408D 400-mil 36-pin R1RW0408DGE-2LR R1RW0408DGE-2PR | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-3v0-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the |
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DS501-00016-3v0-E MB85RC04V MB85RC04V | |
NE502N
Abstract: NE502-N NE502
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NE502-N NE502 512/2fo) 500kHz. 512ms. 500kHz 512ms 45kHz NE502 100nF NE502N NE502-N | |
HM628512B
Abstract: HM628512BLFP-5 HM628512BLFP-5SL HM628512BLFP-7 HM628512BLFP-7SL HM628512BLP-5 HM628512BLP-5SL HM628512BLP-7 HM628512BLP-7SL Hitachi DSA00197
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HM628512B 512-kword ADE-203-903 525-mil 400-mil 600-mil HM628512BLFP-5 HM628512BLFP-5SL HM628512BLFP-7 HM628512BLFP-7SL HM628512BLP-5 HM628512BLP-5SL HM628512BLP-7 HM628512BLP-7SL Hitachi DSA00197 | |