A 107 TRANSISTOR Search Results

BS107

Contextual Info: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Type BS 107 ^DS 200 V Type BS 107 Ordering Code Q67000-S078 lD 0.13 A ffDS(on) 26 Q Pin 3 D G Package Marking TO-92 BS 107

RG-107 diode

Abstract: marking BS Q67000-S078
Contextual Info: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information

Q67000-S078

Abstract: BS 107
Contextual Info: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information

equivalent schematic of LM107

Abstract: LM307N A 107 transistor LM101 LM101A LM107 LM107F LM107H LM107J-14 LM307
Contextual Info: DOTÜ^IOIL LM 107, LM 307 O perational A m plifiers FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA maximum over temperature (107) Offset current 20 nA maxim um over temperature (107) Guaranteed drift characteristics

2N9303

Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
Contextual Info: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2

22 J1J

Contextual Info: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch

Contextual Info: VCO-107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION The V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat

Contextual Info: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch

15VPH

Abstract: I-10K
Contextual Info: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

Ethernet to fiber optic converter circuit

Abstract: KS8995X KS8995M Media Converter Q12N2222 fiber optic module HFBR-5103 100BASE-FX HFBR-5903 KS8995M txm decoder
Contextual Info: Application Note 107 Micrel Application Note 107 Fiber Mode Connections KS8995M/X Interfacing the KS8995M/X with a 3.3V Fiber Optic Module General Description The KS8995M and KS8995X offer 100BASE-FX operation on two ports, which allows 100Mbps Ethernet to be transferred over long distances up to 2km using fiberoptic cables.

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS on 1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m

TIPI02

Abstract: tip1 33T4 DDD1172 TIP100 TIP105
Contextual Info: HL TIPI 00, TIPI 01, T IP I02 TIPI 05, T IP I06, T IP I07 TIP100,101,102 TIP105, 106, 107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications 0IM A B C D E F H J K L M N MIN MAX 16.51 10,67 4.83

transistor bc 325

Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Contextual Info: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.

Some Altera devices have weak pull-up resistors

Abstract: altera EPM7032S epf10k50v EPF10K130V EPM7032S EPM7064S
Contextual Info: Using Altera Devices in Multiple-Voltage Systems June 1999, ver. 1.0 Introduction Application Note 107 Although the 5.0-V interface has been a standard for decades, the move towards advanced process technology requires a shift to lower voltage levels. In today’s market, printed circuit boards PCBs are assembled

Contextual Info: R1115Z SERIES LOW NOISE 150mA LDO Regulator NO.EA-107-070910 OUTLINE The R1115Z Series are CMOS-based voltage regulator ICs with extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an error amplifier,

altera EPM7032S

Abstract: epf10k50v EPF10K130V EPM7032S EPM7064S
Contextual Info: an107_02.fm Page 1 Thursday, September 13, 2001 1:27 PM Using Altera Devices in Multiple-Voltage Systems August 2001, ver. 2.0 Introduction Application Note 107 Although the 5.0-V interface has been a standard for decades, the move towards advanced process technology requires a shift to lower voltage

Contextual Info: BC107, A, B, C thru BC109, A, B, C MAXIMUM RATINGS Rating Symbol BC BC BC 107 108 109 Unit C o lle c to r-E m itte r V o lta g e VCEO 45 25 25 Vdc C o lle c to r-B a s e V o lta g e VCBO 50 30 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 5 5 CASE 22-03, STYLE 1

JR224575

Abstract: diode jr 702
Contextual Info: POWEREX 3=]E D I NC TS'iMbSl DGQMSbS b IPRX / o m tE X JQ224575/JQ225075 JR224575/JR225075 P o w e re x , In c ., W ills S tre e t, Y o u n g w o o d , P en n sylvan ia 1 5 6 9 7 4 1 2 9 2 5 -7 2 7 2 Single Chopper FETMOD Power Modules P ow erex Europe, S .A ., 4 2 8 A ven u e G. D urand, B P 107, 7 2 0 0 3 Le Mans, France (4 3 ) 4 1 .1 4 .1 4

IS621K40

Abstract: PRX SES
Contextual Info: I POlilEREX INC m tm 3=1E D n e x • TSTMbSl _ 00 G 475 5 b «PRX. IS621K40 ' T P ow erex, Inc., H illls S treet, Y oungw ood, P en n sylvan ia 1 5 6 9 7 4 1 2 9 2 5 -7 2 7 2 Single IGBTMOD P ow erex, E urope, S.A. 428 A ve n u e C. D urand, B P 107, 72003 L e M ans, F ran ce (4 3) 4 1 ,1 4 .1 4

BC109

Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.

ZO 109

Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.