A 103 GF Search Results

Contextual Info: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

fdmc86116

Abstract: FDMC86116LZ
Contextual Info: FDMC86116LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

FDMC86106LZ

Abstract: FDMC86106Z
Contextual Info: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

Contextual Info: FDMC86116LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

Q67040-S4009-A2

Abstract: SPP31N05
Contextual Info: BUZ 103 S Preliminary data SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω

Contextual Info: FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process

Contextual Info: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process

Contextual Info: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process

Contextual Info: Interna! with lid removed PARTNo. DIMENSIONS mm A B C D MB21/* 37.5 88.5 103 121 MB34/* 55.5 119 138 155 BIRMINGHAM ENGLAND * SPECIFY COLOUR OPTION BLY BLACK/YELLOW BLB BLACK/BLUE GRY GREY/YELLOW GRB GREY/BLUE MATERIAL NYLON 66 GF / TPE This d raw in g/docu m ent ia a COPYRIGHT and the FINISH

Contextual Info: 16 15 M 14 13 12 11 I 10 S SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. CD MISSING SYMBOLS TOTAL NO OF INSPECTIONS REQUIRED 103 DWG STATUS DATE

AM2302

Contextual Info: Analog Power AM2302N N-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 76 @ VGS = 4.5V 103 @ VGS = 2.5V ID(A) 3.4 3.0 Typical Applications:

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

tocos B103 Potentiometers

Abstract: 103 pot RH96N74 M7 SK
Contextual Info: Catalog No. T P 6 9 8 TOCOSAMERICA TP -9 S eries P a rt N um bering S ystem Example: TP TP96G00N 20S B103 A104 M7-5mm Shaft-6mm dia 00 N - 20 S - POT #1 B 103 S ty le _ POT #2 A 104 _ Resistance Code TP = PC Term RH = PC Top Adj. First & Second Digit = Value

RS 5231

Abstract: ct7502
Contextual Info: WIRE RANGE ID MARK C 'S 'S I Z E HARK> CSTAMPED ON SOTTOMJ 'S ' EBrggA-A BsffBaB-B S EC T A -A S EC T B -B ± 0 .5 2 0 .7 *o~ £ 0 -3 L 5 ±0.3 |gf^~^ 2 .5 a. 9 S. 2 _A. ±0.4 2 .3 «—SH B 32 'X J B .1 to 7 .5 j.s 5QÉ. .v ► • 1* 2 . 5bv 103—5231 SECT B -B

Contextual Info: 9615 SW A llen, S u ite 103 B e a v e rto n , OR 97005 P h o n e : 503 6 4 3 —4899 8 0 0 -2 7 5 -4 8 9 9 Fax: (503) 3 7 2 -1 2 6 6 W ebsite: Trww.oui.com Z Z k C U l IN C Specifications 1 2 Part No. GF0576 Nominal Size 57 3 Impedance 4 Resonance 380 Hz.±

Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com CUI INC Specifications 1 2 Part No. GF0668B Nominal Size 66 mm. 3 Impedance 4 Resonance

A1266 GR

Abstract: A1266
Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z 2 & C U I INC Specifications 1 2 Part No. GF0571M Nominal Size 57 3 Impedance 4 Resonance

Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com CUI INC Specifications 1 2 Part No. GF0666 Nominal Size 66 mm. Resonance 320 Hz.± 64

GF0922

Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 Phone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z Z ^ C U I INC Specifications 1 2 Part No. GF0922 Nominal Size 92 3 Impedance 4 Resonance

GF0666M

Abstract: 6032t
Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z 2 & C U I INC Specifications 1 2 Part No. GF0666M Nominal Size 66 3 Impedance 4 Resonance

Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 Phone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com G U I INC Specifications 1 2 Part No. GF0571H Nominal Size 57 3 Impedance 4 Resonance 400

SC11024

Abstract: 11024C 2764 z SCI1006
Contextual Info: V SIERRA SEMICONDUCTOR SC11024 2400 Bit Per Second Modem Analog Peripheral □ Conforms to CCITT V.22 bis, V.22, V.21, and Bell 212A and 103 standards □ Single 5 V supply with 10 mW power dow n mode □ A nalog, digital, and rem ote digital loopback □ Integrated DTM F/G uard Tone

Contextual Info: Preliminary Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A ≤ 6.0 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

372a

Abstract: GF1004M
Contextual Info: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 Phone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z Z ^ C U I INC Specifications 1 2 Part No. GF1004M Nominal Size 102 3 Impedance 4 Resonance