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    FDMC86116 Search Results

    FDMC86116 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86116LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.3A 8-MLP Original PDF 7
    FDMC86116LZ-L701
    		onsemi FET 100V 103.0 MOHM MLP33 Original PDF 522.72KB 10
    SF Impression Pixel

    FDMC86116 Price and Stock

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    onsemi FDMC86116LZ-L701

    - Tape and Reel (Alt: FDMC86116LZ-L701)
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    Avnet Americas FDMC86116LZ-L701 Tape & Reel 3,000
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    onsemi FDMC86116LZ

    - Tape and Reel (Alt: FDMC86116LZ)
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    Avnet Americas FDMC86116LZ Tape & Reel 22 Weeks 3,000
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    Mouser Electronics FDMC86116LZ 6,563
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    Verical FDMC86116LZ 119 14
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    Arrow Electronics FDMC86116LZ Cut Strips 119 22 Weeks 1
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    Newark () FDMC86116LZ Cut Tape 5,886 5
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    FDMC86116LZ Tape & Reel 3,000
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    RS FDMC86116LZ Bulk 2 Weeks 10
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    Onlinecomponents.com FDMC86116LZ
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    Bristol Electronics FDMC86116LZ 1,405
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    Quest Components FDMC86116LZ 1,096
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    Rochester Electronics FDMC86116LZ 538 1
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    TME FDMC86116LZ 1
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    Avnet Silica FDMC86116LZ 23 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMC86116LZ

    MOSFET N-CH 100V 3.3A 8-MLP
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    Win Source Electronics FDMC86116LZ 32,453
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    FDMC86116 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process


    Original     		FDMC86116LZ PDF

    Contextual Info: FDMC86116LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDMC86116LZ PDF

    fdmc86116

    Abstract: FDMC86116LZ
    Contextual Info: FDMC86116LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDMC86116LZ FDMC86116LZ fdmc86116 PDF