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    A 100G Search Results

    A 100G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-100GLB2.5W-0DB
    Amphenol Cables on Demand Amphenol SF-100GLB2.5W-0DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 0dB Attenuation & 2.5W Power Consumption [100-Gigabit Ethernet Ready] PDF
    SF-100GLB1.5W-6DB
    Amphenol Cables on Demand Amphenol SF-100GLB1.5W-6DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 6dB Attenuation & 1.5W Power Consumption [100-Gigabit Ethernet Ready] PDF
    SF-100GLB0W00-0DB
    Amphenol Cables on Demand Amphenol SF-100GLB0W00-0DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 0dB Attenuation & 0W Power Consumption [100-Gigabit Ethernet Ready] PDF
    SF-100GLB2.5W-5DB
    Amphenol Cables on Demand Amphenol SF-100GLB2.5W-5DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 5dB Attenuation & 2.5W Power Consumption [100-Gigabit Ethernet Ready] PDF
    SF-100GLB0W00-5DB
    Amphenol Cables on Demand Amphenol SF-100GLB0W00-5DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 5dB Attenuation & 0W Power Consumption [100-Gigabit Ethernet Ready] PDF
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    Murata Manufacturing Co Ltd GRM0335C2A100GA01D

    CAP CER 10PF 100V C0G/NP0 0201
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    DigiKey () GRM0335C2A100GA01D Cut Tape 16,936 1
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    GRM0335C2A100GA01D Digi-Reel 16,936 1
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    Chip Stock GRM0335C2A100GA01D 912,500
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    Murata Manufacturing Co Ltd GRM1555C2A100GA01D

    CAP CER 10PF 100V C0G 0402
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    DigiKey () GRM1555C2A100GA01D Digi-Reel 8,000 1
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    GRM1555C2A100GA01D Cut Tape 8,000 1
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    Amphenol Advanced Sensors MA100GG103BN

    THERM NTC 10KOHM 3969K PROBE
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    DigiKey MA100GG103BN Bulk 4,152 1
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    Newark MA100GG103BN Bulk 78 1
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    RS MA100GG103BN Bulk 1,293 1
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    Murata Manufacturing Co Ltd GJM0335C2A100GB01D

    CAP CER 10PF 100V C0G/NP0 0201
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    DigiKey () GJM0335C2A100GB01D Cut Tape 3,238 1
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    GJM0335C2A100GB01D Digi-Reel 3,238 1
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    Avnet Americas GJM0335C2A100GB01D Reel 14 Weeks 15,000
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    TME GJM0335C2A100GB01D 15,000
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    Avnet Abacus GJM0335C2A100GB01D 17 Weeks 15,000
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    onsemi HPM10-W29A100G

    IC BATT PWR MGMT MULTI 29WLCSP
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    DigiKey () HPM10-W29A100G Digi-Reel 2,254 1
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    HPM10-W29A100G Cut Tape 2,254 1
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    Rochester Electronics HPM10-W29A100G 19,235 1
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    Richardson RFPD HPM10-W29A100G 5,000
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    Chip 1 Exchange HPM10-W29A100G 5,861
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    Avnet Silica HPM10-W29A100G 24 Weeks 5,000
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    EBV Elektronik HPM10-W29A100G 25 Weeks 5,000
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    A 100G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Power AMPLIFIER 6012

    Abstract: PH602 Optical Electronics 9906 COMPONENT REQUIRED FOR MAKING MINI INVERTER optical electronics 9908 FET differential amplifier circuit "optical electronics"
    Contextual Info: 9908 D A T A A N D S P E C IF IC A T IO N S D E S C R IP T IO N A N D IN S T R U C T IO N S Optical Electronics Incorporated FAST S E TT LIN G FET O P E R A TIO N A L A M PLIFIER FEATURES APPLICA TIO NS • DIFFERENTIAL INPUT IMPEDANCE: 100G fl • A /D, D/A, and S/H


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    100MHz 25V/MS 300ns 2000ohm TWX-910-952-1283 Power AMPLIFIER 6012 PH602 Optical Electronics 9906 COMPONENT REQUIRED FOR MAKING MINI INVERTER optical electronics 9908 FET differential amplifier circuit "optical electronics" PDF

    1N3627

    Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
    Contextual Info: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +


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    fiT17bà 1N950-956 V20G-100G V20G-100G 1N3627 IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G PDF

    Contextual Info: 100G10F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage10k t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage11 @I(FM) (A) (Test Condition)100m


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    100G10F Current100m Voltage10k Time250n Voltage11 Current300n PDF

    Contextual Info: 100G15F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage15k t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage17 @I(FM) (A) (Test Condition)100m


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    100G15F Current100m Voltage15k Time250n Voltage17 Current300n PDF

    Contextual Info: DMM Series 100 contacts Part Numbering Code Unit : mm DMM-100G-432FNK31 Dimensions Section A-A 26


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    DMM-100G-432FNK31 PDF

    E14-101GH

    Abstract: e14 socket E14-100GH e14-101g oscilloscope tube 7Z66 beam Tube Scans-0017823 E1410
    Contextual Info: E14-100GH OBSOLESCENT TYPE J V _ INSTUMENT CATHODE-RAY TUBE 14 cm diagonal, re ctan g u la r flat faced , sp lit-b e a m o scillo sco p e tube with m esh and m etal-b ack ed s c re e n . Q U IC K R E F E R E N C E D A T A F in a l a c c e le ra to r voltage


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    E14-100GH 100GH E14-101GH E14-100GH e14 socket e14-101g oscilloscope tube 7Z66 beam Tube Scans-0017823 E1410 PDF

    Contextual Info: ML 4000 SERIES GALLIUM ARSENIDE MULTIPLIER VARACTOR DIODES T h e M L 4 8 7 0 0 S eries o f G a lliu m A rsen id e A b ru p t Ju n ctio n M u ltip lie r V aractors is specifically d e sig n e d to provide so lid state, h ig h o rd e r m u ltip lica tio n a t o u tp u t freq u en cies ex te n d in g to 100G H z. A ll v a ra c to rs in th is series are


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    PDF

    Contextual Info: 100G10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage10k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage11 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


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    100G10 Current100m Voltage10k Voltage11 Current300n PDF

    Contextual Info: 100G15 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage15k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage17 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


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    100G15 Current100m Voltage15k Voltage17 Current300n PDF

    Contextual Info: 8 P A R T N UMBER 922-373A-B3B 6 COMPLIANT PIN IMPEDANCE TABLE 1 DESCRIPTION 922-373A-B3C 922-373A-B3D 00.0177" 922-373A-B3F 922-373A-B3G 922-373A-B3H 100G H I G H SPEED MODULE Ni S U L F A M A T E , H I G H G OL D , L E A D F R E E 922-373A-B3J 922-373F-B3B


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    22-373A-B3B 22-373A-B3J 922-373F-B3C 922-373F-B3D C922-373A-500 Q1189-DC-3PR-iP0S-G2-C0NN-B-100 PDF

    Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical


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    H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M PDF

    H11F1M

    Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
    Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical


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    H11F1M, H11F2M, H11F3M E90700) H11FXM H11F1M H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers PDF

    H11f1 variable resistor 500k

    Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M
    Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical


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    H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM PDF

    H11f1 variable resistor 500k

    Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
    Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical


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    H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3 PDF

    h11f1m

    Abstract: H11FXM Fairchild H11FxM H11FX H11F2M H11F3M H74A1 H11F1SVM
    Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical


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    H11F1M, H11F2M, H11F3M H11FXM H11F3M h11f1m Fairchild H11FxM H11FX H11F2M H74A1 H11F1SVM PDF

    6RI100G-120

    Abstract: DIODE T25 smew 6RI100G fuji 3 phase diode NX DIODE
    Contextual Info: FUJI O tU K Ë Ü M lË 6RI 6-Pack Diode 1200/1600 V 100 A 100G-120/160 POWER DIODE M ODULE O u t lin e D r a w i n g s Features A ll the te rm in a ls and the m o u n tin g plate are electrically isolated. These m odules can be installed in the same coo lin g fin as other m odules, thus saving in sta lla tion


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    6RI100G-120/160 D005L03 6RI100G-120 DIODE T25 smew 6RI100G fuji 3 phase diode NX DIODE PDF

    Contextual Info: ACX-KIT-HD1000-100G Development Kit User Guide UG034, March 11, 2014 UG034, March 11, 2014 1 Copyright Info Copyright 2014 Achronix Semiconductor Corporation. All rights reserved. Achronix is a trademark and Speedster is a registered trademark of Achronix Semiconductor Corporation.


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    ACX-KIT-HD1000-100G UG034, 633MHz. PDF

    Contextual Info: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 4500V :F AV = 1°0 a M A X IM U M RATINGS CHARACTERISTIC


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    100GXHH22 PDF

    CRF-BNC-331-0065-9-A

    Contextual Info: 1 2 3 4 5 6 7 8 9 A B C A B SPECIFICATIONS Impedance: Withstanding: Insulation resistance: Contact resistance: 50 ohm 1500VRMS 50 megohms min. Outer 10 milliohm max. Center 30 milliohm max. VSWR: 1.2 max. Contact pressure: 100g. min. Terminal strength: 500g


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    1500VRMS CRF-BNC-331-0065-9-A CRF-BNC-331-0065-9-A PDF

    E3S-CD63

    Abstract: light dark sensor circuit functions light sensor in light sensor indicator Reflective Optical Sensor with Transistor Output S3d2 torque settings chart for mm stainless bolts LENS-17 E3S-CD68 XW3A-P443-G11 LED Reflective Optical Sensor
    Contextual Info: Label Sensor E3S-CD68/CD63 Ideal for Detecting Labels on Bottles Satisfies the requirements of IP67. Ensures a vibration resistance of 10 Hz to 2 kHz and a shock resistance of 1,000 m/s2 approximately 100G . Incorporates an NPN and PNP output selector, thus


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    E3S-CD68/CD63 E3S-CD68/CD63 E3S-CD68 E3S-CD63 E3S-CD68/CD63, E254-E1-1 E3S-CD63 light dark sensor circuit functions light sensor in light sensor indicator Reflective Optical Sensor with Transistor Output S3d2 torque settings chart for mm stainless bolts LENS-17 E3S-CD68 XW3A-P443-G11 LED Reflective Optical Sensor PDF

    S11DD

    Contextual Info: KEY FEATURES • 100Gb/s = 10x10Gb/s 100GBASE-ER10 • 40km reach • 400GHz wavelength spacing 10x10 Gb/s WDM ER10 TOSA with 40km Reach The KAIAM ER10 TOSA is a 100G transmitter optical sub-assembly incorporating 10 independent WDM channels, on a 400GHz wavelength grid,


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    100Gb/s 10x10Gb/s 100GBASE-ER10 400GHz 10x10 S11DD PDF

    DDR-180-1-1-2-1

    Contextual Info: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Current rating: Voltage rating: Contact material: Contact plating: 1 amp 250VAC Phosphor bronze, C5191 Mating area: gold Solder area: tin over nickel Insulator material: Nylon66, UL94V-0 Insertion force: 100g per contact pair max.


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    250VAC C5191 Nylon66, UL94V-0 DDR-180-1-1-2-1 DDR-180-1-1-2-1 PDF

    Contextual Info: VS-501 Voltage Controlled SAW Oscillator VS-501 Description The VS-501 VCSO Voltage Controlled Saw Oscillator from Vectron is a high frequency, ultra low phase noise oscillator designed to support high speed data converters and 100G coherent optical receivers. The VS-501 provides 12fs rms jitter in a 12kHz to


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    VS-501 VS-501 12kHz 20MHz 12fsec 20MHz D-74924 PDF

    Contextual Info: VS-501 Voltage Controlled SAW Oscillator VS-501 Description The VS-501 VCSO Voltage Controlled Saw Oscillator from Vectron is a high frequency, ultra low phase noise oscillator designed to support high speed data converters and 100G coherent optical receivers. The VS-501 provides 12fs rms jitter in a 12kHz to


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    VS-501 VS-501 12kHz 20MHz 12fsec 20MHz D-74924 PDF