ZBD857 Search Results

ZBD857

Abstract: V3003-50
Contextual Info: ZBD857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 330 Collector-Emitter Breakdown Voltag V(BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 475 V

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 2 A m p s Low collector-emitter saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

300V transistor npn 2a

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fa st sw itc h in g * G uaranteed h FE specified up to 2 A m p s * L o w collector-em itter saturation v o lta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L