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    ya868c12

    Abstract: ya868c12r ya868
    Contextual Info: YA868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 120 0.88 15±0.2 Characteristics YA868C12R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2


    Original     		ya868c12ro-220ya868c12ya868 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		rh011h2007-10b120fismp2a5100ya868c12+8ya868c152sk4004yg865c10f5049diode 3a05diode smd sj 24diode smd sj 09diode smd sj 28 PDF

    YA868C15

    Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R
    Contextual Info: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD） デュアル 2 in one-package 形 式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R


    Original     		o220abo220fya971s6ryg971s6r+12ya972s6ryg972s6rya868c15ya868c12yg972s6yg862c15yg865c15yg862c15ryg975c6rya865c12ryg971s6yg862c12r PDF