YA868 Search Results

YA868C10R

Contextual Info: YA868C10R 100V / 30A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation

ya868c12

Abstract: ya868c12r ya868
Contextual Info: YA868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 120 0.88 15±0.2 Characteristics YA868C12R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2

YA868C15

Contextual Info: DATE CHECKED Device Name ： Type Name ： YA868C15R Spec. No. ： MS5D1808 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any

Contextual Info: http://www.fujisemi.com YA868C08R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*

YA868C15

Abstract: YA868C15R
Contextual Info: YA868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 150 0.90 15±0.2 Characteristics YA868C15R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2

Contextual Info: YA868C04R 45V / 30A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation

YA868C06

Abstract: YA868C06R 4321
Contextual Info: YA868C06R 60V / 30A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

YA868C15

Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R
Contextual Info: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD） デュアル 2 in one-package 形 式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R

Contextual Info: DAT E DRAWN SEP.-14-‘07 CHECKED SEP.-14-‘07 CHECKED SEP.-14-‘07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,