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    Y5117400 Search Results

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    Y5117400 Price and Stock

    hyn

    hyn HY5117400BT60

    4M X 4, FAST PAGE MODE Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY5117400BT60 54
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    Y5117400 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HYM536410CM

    Contextual Info: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


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    hym536410c4mx364mx36-bity5117400c+4hy514100ahym536410cmhym536410cmg72-pin PDF

    HYM536410

    Abstract: HYM536410MG HYM53
    Contextual Info: • H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 4 1 0 S e r ie s 4M x 36-bit c m o s d r a m m o d u l e PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of eight H Y5117400 in 24/28 pin SO J and four HY514100A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2fyF decoupling


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    36-bithym536410y5117400hy514100a+6hym53641om/lmhym53641omg/lmg1ce06-00-m1ce06-00-may93hym536410mghym53 PDF

    Contextual Info: Y5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The Y5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    hy5117400a117400a1ad27-10-may9shy5117400aj+3hy5117400aty5117400aslthy5117400ar PDF

    1MX16BIT

    Abstract: 16MX1
    Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


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    256kx4-bit1mx16bit16mx1 PDF

    PP-T20

    Abstract: HY5117400B bel power QBS
    Contextual Info: Y5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The Y5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    hy5117400by5117400b4b750fl1ad46-00-may9s+5gg0457ehy5117400bjhy5117400bsljpp-t20bel power qbs PDF

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Contextual Info: Y5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The Y5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he Y5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    hy5117400ay5117400a1ad27-10-mahy5117400aj+8hy5117400asljhy5117400athy5117400aslta1d10hy5117400aj60hy5117400amo 0210oh371 PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    hy531000ashy531000alshy531000ajhy531000alj+10hy534256ashy534256alshy534256ajhy534256aljhy512260jchy512260ljcauo-pl321.60hy51v18164bhy514264hy514260 PDF