X2N5912 Search Results
X2N5912 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| X2N5912 |
|
Dual N-Channel JFET High Frequency Amplifier | Original | 25.64KB | 2 |
X2N5912 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: X2N5912 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)367m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) |
Original |
x2n5912 | |
|
Contextual Info: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V |
OCR Scan |
2n5911/2n5912367mw500mw2n5911+3 | |
2N5912
Abstract: 2N5911 2N5911-12 X2N5912
|
Original |
2n59112n5912-65oc200oc+8 | |
2N5911
Abstract: 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet
|
Original |
2n59112n5912-65oc200oc+10 | |
2N5912Contextual Info: Dual N-Channe! JFET High Frequency Amplifier caioqic CORPORATION 2N5911 /2N5912 FEATU R ES A B S O L U T E MAXIMUM RATIN G S Ta - 25°C unless otherwise specified • Tight Tracking • Low Insertion L o s s • G o o d M atching Gate-Drain or Gate-Source Voltage . -25V |
OCR Scan |
2n5911/2n5912367mw500mw+2 | |
2N5911
Abstract: 2n5912 2N5911-12 X2N5912 2NS912
|
OCR Scan |
2n5911/2n591210sec367mw+8 | |
|
Contextual Info: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V |
Original |
2n59112n5912-65oc200oc+6 |