AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2N5586
Abstract: 2N5585 2N5911 2N5584 2N5912 NF5011 NPD5584 NPD5586 U440 U441
Contextual Info: National Semiconductor N-Channel JFETs co m Wide Band—Low Noise Dual JFETs n o Operating Conditions for these Characteristics VqS1-2 Drift C fu C n , BV G o. CMRR Vfl» •css Gfe Go k i _2 ■q H G 2 Go n G f. Vr R Of* ■g Igss loss Process Pkg. Vos iftV /X
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2n55842n55852n55862n5911+92ns912npd5584npd5585npd5586nf5011nf50122n5912u440u441
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2N5912
Abstract: 2N5911 2N5912 jfet dss2 IT5911 IT5912
Contextual Info: 2N 5911, 2N 5912 IT 5 9 1 1 , IT 5 9 1 2 D ual M onolithic N -C h an n el JF E T FEATURES • Tracking < 20 juV/°C • gfs < 5000 jUmho, 0 - 1 0 0 MHz • Matched V GS. A V GS/ A T . I G.9 fs, PIN CONFIGURATION TO-99 CHIP TOPOGRAPHY TO-71 6022 0037 0037 ' 002? ' 0027
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2n59112n5912it5911it5912+42n5911/w2n5911/d2n5912 jfetdss2
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2N5911
Abstract: 2n5912 2N5911-12 X2N5912 2NS912
Contextual Info: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V
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2n5911/2n591210sec367mw+8500mw2ns912300na1a4432s000ch332n59122n5911-12x2n5912
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