UTR10 Search Results

T4-LDS-0290

Abstract: RWM 5 Microsemi micronote series 050 UTR42
Contextual Info: UTR10 – UTR60, UTR01 – UTR61, and UTR02 – UTR62 Available 0.5 Amp To 2 Amp Fast Recovery Glass Rectifiers DESCRIPTION This miniature, fast recovery rectifier diode series permits operation at frequencies as high as a 40kHz square wave. These devices are axial equivalents of the 1N5615US - 1N5623US MELF

Microsemi micronote series 050

Contextual Info: UTR10 – UTR60, UTR01 – UTR61, and UTR02 – UTR62 Available 0.5 Amp To 2 Amp Fast Recovery Glass Rectifiers DESCRIPTION This miniature, fast recovery rectifier diode series permits operation at frequencies as high as a 40kHz square wave. These devices are available in both leaded and surface mount MELF package

DLFR102

Abstract: 17257
Contextual Info: Fast Recovery Rectifiers Fart Number I 1N643 JAN1N643 MC5619 MC5618 MC5617 UTR10 UTR20 UTR30 UTR40 UTR50 UTR60 MC5612 MC5616 MC5611 MC5615 MC5610 MC5614 MC5613 UTX105 DLFR101 FR101 FR101GP FR151GP 1N4933 1N4933GP DL4933 FR1A FS1A UTR01 UTX110 DLFR102 FR102

Contextual Info: DIGITRON SEMICONDUCTORS UTR10-UTR60, UTR01-UTR61, UTR02-UTR62 FAST RECOVERY RECTIFIERS MAXIMUM RATINGS Characteristic Maximum average DC output current @ TA = 25°C @ TA = 100°C Non-repetitive sinusoidal Surge current 8.3ms ½ amp series 1 amp series 2 amp series

Microsemi micronote series 050

Contextual Info: UTR10 – UTR60, UTR01 – UTR61, and UTR02 – UTR62 Available 0.5 Amp To 2 Amp Fast Recovery Glass Rectifiers DESCRIPTION This miniature, fast recovery rectifier diode series permits operation at frequencies as high as a 40 kHz square wave. These devices are axial equivalents of the 1N5615US - 1N5623US MELF

UZ840

Abstract: UTR01 UTR02 UTR10 UTR11 UTR12 UTR20 UTR21 UTR22
Contextual Info: UTR10-UTR60 UTR01-UTR61 UTR02-UTR62 RECTIFIERS Fast Recovery, 0.5 Am p to 2 Amp FEATURES D E S C R IP T IO N • • • • • • These miniature fast recovery rectifiers permit operation at full frequencies as high as 40kHz square wave. They have the unique Unitrode Fused in Glass con

UTR01

Abstract: UTR02 UTR10 UTR11 UTR12 UTR20 UTR21 UTR22
Contextual Info: UTR10-UTR60 UTR01-UTR61 UTR02-UTR62 RECTIFIERS Fast Recovery, 0.5 Amp to 2 Amp FEATU R ES D E S C R IP T IO N • • • • • • These miniature fast recovery rectifiers permit operation at full frequencies as high as 40kHz square wave. They have the

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: Semicustom Products UTR. 0.8 1 Gate Array Family Preliminary Data Sheet urn M I C R O E L E C T R O N I C M qw SYSTEMS i QQß ' FEATURES PRODUCT DESCRIPTION □ U p t o 2 0 0 ,0 0 0 u sa b le e q u iv a le n t g a te s □ Q o c k ra te s up to 130 M H z □

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

O4N10

Abstract: Micromaster 54XX 80C31 UTR100 UTR25 UTR35 UTR50 UTR75 intel 80C31
Contextual Info: Semicustom Products UTR 0.8µ Gate Array Family Preliminary Data Sheet Jan. 2000 FEATURES PRODUCT DESCRIPTION q Up to 200,000 usable equivalent gates q Clock rates up to 180 MHz q Advanced 0.8µ radiation-hardened silicon gate CMOS q Operating voltage of 5V

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

O4N10

Abstract: 54XX 80C31 UTR100 UTR25 UTR35 UTR50 UTR75 Micromaster
Contextual Info: Semicustom Products UTR 0.8 Gate Array Family Preliminary Data Sheet Nov. 1996 FEATURES PRODUCT DESCRIPTION q Up to 200,000 usable equivalent gates q Clock rates up to 130 MHz q Advanced 0.8 radiation-hardened silicon gate CMOS q Operating voltage of 5V q QML Class Q & V compliant

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

Contextual Info: RECTIFIERS ,_ ^ r- « liK ÏS f? UTR01-UTR61 . « * Fast Recovery, 0.5 Am p to 2 Amp u t r o 2 u t r 62 - FEATURES D E S C R IP T IO N • • • • • • These miniature fast recovery rectifiers permit operation at full frequencies a s high a s 4 0kH z square wave. They have the

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave