UPD43 Search Results

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

Contextual Info: UPD43256BGX-B12-EJA 1/2 IL16 ∗∗∗∗∗ C-MOS 256k (32kx8) BIT STATIC RAM –TOP VIEW– OE A11 A9 A8 A13 WE A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC VDD (+2.7 to 5.5V) GND NC A0-14 ; ADDRESS INPUTS I/O1-18 ; DATA INPUTS/OUTPUTS

STATIC RAM 6264

Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15
Contextual Info: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:

TA1024

Contextual Info: NEC NEC Electronics Inc. //PD 43501 1,024-C H A N N E L TIM E DIVISION SW ITCH Description Features The/uPD43501 is a tim e-sw itch device designed fo r use in a high-perform ance digital com m unications net­ work. Features include a tim e-switch function by

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The ,uPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 3 1 5 3 2 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

0829A

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

431000A

Abstract: UPD431000ACZ-70LL UPD431000ACZ-70L upd431000a UPD431000ACZ70LL
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4 3 1 0 0 0 A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The ,uPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words x 8 bits CMOS static RAM. The ^PD 431000A has two chip enable pins (CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MPD4 3 1 2 3 1 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The ,uPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434001 AL 4M -BIT CMOS FAST SRAM 4M -W ORD BY 1-BIT Description The ,uPD434001 AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iP D 4 3 8 2 16 1,4382181,4382321,4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The ,uPD4382161 is a 524,288-word by 16-bit, the ,uPD4382181 is a 524,288-word by 18-bit, the ,uPD4382321 is a

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,uPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

oa203

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434001 AL 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The ,uPD434001 AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

0829A

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004AL 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434008AL 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The ^¡PD434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT UPD432937 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 36-BIT PIPELINED OPERATION / HSTL INTERFACE Description T he ,uPD 432937 is a 65 ,5 3 6 -w o rd by 3 6 -b it synch ron ous static RAM fa b rica te d w ith advan ced C M O S te ch n o lo g y