UNR221M Search Results

UN221M

Abstract: UNR221M XN0121M XN121M
Contextual Info: Composite Transistors XN0121M XN121M NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR221M(UN221M) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Composite Transistors XN0121M XN121M Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 1 0.30+0.10 –0.05 (0.65) • Basic Part Number 2 1.1+0.2 –0.1 ea s ht e v tp is :// it pa fo na llo so win

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0421M Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

UP0431MG

Abstract: UNR211M UNR221M
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431MG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

UNR221M

Abstract: UP0121M
Contextual Info: Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 0.30 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 • Basic Part Number 5° Symbol Rating Unit Collector-base voltage (Emitter open)

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0421M Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

Panasonic Main Unit VB -5150

Abstract: UNR221M UP0121M
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 (0.30) 2 3 (0.50) (0.50) 1.00±0.05 (0.20) (0.20) ue pl d in

UNR221M

Abstract: UP0121M
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 (0.30) 2 3 (0.50) (0.50) 1.00±0.05 (0.20) (0.20) ue pl d in

UNR221M

Abstract: XP0121M
Contextual Info: Composite Transistors XP0121M Silicon NPN epitaxial planar type 0.425 For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

221L

Abstract: UN22XX UNR2218 17 25 04 UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215
Contextual Info: Transistors with built-in Resistor UNR22XX Series UN22XX Series Silicon NPN epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431MG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)

UNR221M

Abstract: XP0421M
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0421M Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

221D

Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

UN221M

Abstract: UNR221M XN0121M XN121M
Contextual Info: Composite Transistors XN0121M XN121M Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 2 1 (0.65) 0.30+0.10 –0.05 1.1+0.2 –0.1 Parameter Collector-base voltage (Emitter open)

UN221M

Abstract: UNR221M XP0421M
Contextual Info: Composite Transistors XP0421M Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm 0.425 For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half