U2TA510
Abstract: Unitrode Semiconductor U2TA506
Contextual Info: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction
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13m7c0d1e507u2ta506u2ta508+5u2ta510u2ta51c10mhz300/isunitrode semiconductor
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U2TA506
Abstract: U2TA508 U2TA510 U2TA
Contextual Info: POWER DARLINGTONS 3 Amp, 100V, Planar NPN, Plastic U2TA506 U2TA508 U2TA510 D E S C R IP T IO N Unitrode N P N D arlingto ns co n sist of a two transistor circuit on a sin g le m ono lithic planar chip, in clu d in g integral bias resistance and protective diode. It is
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u2ta506u2ta508u2ta51010mhz+1u2ta
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U2TA508
Abstract: 1A 100V DIODE R-1 U2TA510
Contextual Info: POWER DARLINGTONS U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES DESCRIPTION • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 15V max. @ lc = 3A • Economic Plastic Molded Construction Unitrode NPN Dariingtons consist of a
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u2ta506u2ta508u2ta51010mhz+11a 100v diode r-1
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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comp27-1296triacs bt 804 600vur7201n4465+7ao110diode 1n5392n3750unitrode discrete databook2n6138cm104unitrode 679 bridge rectifier
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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