TVR1G Search Results

VR1G

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

vr1g

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B, TVR1G, TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

Contextual Info: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage

TVR2B

Abstract: marking CS TOSHIBA
Contextual Info: TO SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE TVR3R • w a r n SILICON DIFFUSED TYPE TVR1G mmr g ■ w ■ m TVR3I g m w ■ « v TV APPLICATIONS FAST RECOVERY U nit in mm • Average Forward Current If (AV) =0-5A (Ta = 50°C) • Repetitive Peak Reverse Voltage

Contextual Info: T O SH IB A TVR1 B,TVR1G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : I f ( A V ) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : V t?:rm = 100V~600V

vr1g

Abstract: Diode VR1B DIODE VR1J VR1B VR1J
Contextual Info: TO SH IBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C)

Contextual Info: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage

vr1g

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s

vr1g

Abstract: VR1B DIODE VR1J toshiba last digit of year
Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V · Reverse Recovery Time: trr = 2.0 µs

vr1g

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s

vr1g

Abstract: Diode VR1B VR1B VR1J 1J TOSHIBA
Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

TVR1GPP

Contextual Info: TVR1GPP GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 400V CURRENT: 1.0A FEATURE DO - 41\DO- 204AL Molded case feature for auto insertion High current capability Low leakage current Fast switching capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension

TVR1B

Abstract: TVR1D
Contextual Info: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 1.0 25.4 MIN •反向漏电流低 .034(0.9)

vr1g

Abstract: TOSHIBA DIODE DATABOOK VR1j
Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

DIODE 39c

Abstract: 1S2777 TVRIG 1S2775 1S2776 251C diode 1BA TVR1D 125X3
Contextual Info: 9097250 TOSHIBA FAST RECOVERY DIODE TVR1J 600V 39C 02238 <D IS C R E T E / O P T O In dF I t DT V S S O 0 0 0 2 2 3 Û 7 U n it in 0 .5 A M AXIMUM RATINGS C H A R A C T E R IS T IC TVR1B TVR1D R epetitive Peak R everse Voltage TVR1G TVR1J Average F orw ard C urrent

SR400FV-70

Abstract: SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - M m s SR400FH-60 SR400FV-70 SR400FV—80 SRH25C SWH2-16 SWH2-20 SWH2-25ED SffH-08 SWH-10 SWHD2-16 SWHD2-20 SWHD2-25 S*HD3-16 SWHD3-20 T51A T51B T51C T52A T52B T52C TD-13 TD-15 TD-15H TFR1L TFR1N TFR1Q TFR1T TFR2L TFR2N TFR2Q TFR2T TFR4L TFR4N TFR4Q TFR4T

toshiba diode "do-41"

Abstract: tvr1 TVR1B
Contextual Info: TO SH IB A TVR1 B,TVR1 G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE T V R 1 Rmmr g TX /R lfi g Tm V R 1 I m • w ■ « ■ w ■ m ■ w ■ « ■ v Unit in mm TV APPLICATIONS FAST RECOVERY • Average Forward Current !f (AV) =0-5A (Ta = 65°C)

TVR1B

Abstract: toshiba diode "do-41"
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE - O • • • TVR1B/G/J TV APPLICATIONS. FAST RECOVERY U n it in mm Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

6B4B41

Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Contextual Info: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N

SWH2-16

Abstract: TVRIG SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

SRH25C

Abstract: nl 545 SR400FV-70 SR400FV-80 SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com TVR1B/G/J IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current