TSAL7600 Search Results
TSAL7600 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSAL7600 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 81.34KB | 5 |
TSAL7600 Price and Stock
Vishay Siliconix TSAL7600IR EMITTER HIGH POWR 950NM 5MM 30DEG |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL7600 | Bulk | 1 |
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Get Quote | ||||||
Vishay Intertechnologies TSAL7600940 NM, GAALAS/GAAS, HIGH POWER INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 940nm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL7600 | 1,000 |
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Get Quote | |||||||
TSAL7600 Datasheets Context Search
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Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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tsal7600d-7402520-may-99 | |
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Contextual Info: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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tsal760018-jul-08 | |
08D diodeContextual Info: TSAL7600 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm iJ -V A Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
tsal7600d-74025ec-9808d diode | |
high power infrared led
Abstract: TSAL7600
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tsal76002002/95/ec2002/96/ec18-jul-08+1 | |
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Contextual Info: TSAL7600 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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tsal7600d-7402508-apr-04 | |
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Contextual Info: TSAL7600 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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tsal7600d-7402501-oct-04 | |
TSAL7600Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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tsal7600d-7402520-may-99 | |
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Contextual Info: TSAL7600 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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tsal7600d-7402504-may-04 | |
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Contextual Info: TSAL7600 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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tsal760008-apr-05 | |
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Contextual Info: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
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tsal76002002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSAL7600 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal7600d-7402520-may-99 | |
TSAL7600Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal7600d-7402520-may-99 | |
TSAL7600Contextual Info: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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tsal760008-apr-05 | |
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Contextual Info: TSAL7600 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
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tsal76002002/95/ec2002/96/ec2011/65/eu+1 | |
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Contextual Info: TSAL7600 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
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tsal76002002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSAL7600 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
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tsal76002002/95/ec2002/96/ec2011/65/eu+2 | |
TSAL7600Contextual Info: TSAL7600 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal7600d-7402520-may-99 | |
sharp laser diodes
Abstract: TSOP855
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vse-db0090-1010sharp laser diodestsop855 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90f8548sdp8600-00195f5325sdp8371-001+16 | |
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Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920vsa-sg0041-0512tept5600 response timeapplication notes tsal4400+8 | |
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Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
3 mm ir receiver
Abstract: TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200
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870nm950nm3 mm ir receivertsal6200* transmitter+8 | |