TRSP3006 Search Results

10 35 DIODE

Abstract: BFT19B diode 15 35
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504

Contextual Info: TRSP3006 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300ã V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

TIS84

Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
Contextual Info: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125

diode 2U 66

Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)