TQ202 Search Results

TQ202-100

Contextual Info: REACTION TORQUE SENSORS FLANGE TO SHAFT MOUNT LOW TORQUE RANGE TQ202 Series Reaction Torque Shown Larger than Actual Size 0-25 oz-in to 0-250 in-lb 0-0.18 N-m to 0-30 N-m Model TQ202-100 795 $ 29.7 1.17 12.7 (.50) 33 (1.3) MADE IN USA OMEGADYNE ߜ All Stainless Steel Case

SCR Handbook, rca

Abstract: C106Y RCA 559 TO3 SCR Handbook, rca s2061a
Contextual Info: mm • H Silicon Controlled Rectifiers SCR’s Type Selection Charts Voltage Current !T R C A (R M S) Types A IT S M Temp. V DROM V RROM V 50/60 Hz A Max.-Gate Char. IG T V GT mA V 3.5 18.5/20 45 200 2.5 100 15 30 50 100 3.14 14/15 45 200 0.5 0.8 2.5 100

S107Y

Abstract: gogo board RCA 2N3528 scr 2N3528 rca 711
Contextual Info: mm • H Silicon Controlled Rectifiers SCR’s Type Selection Charts !T R C A (RMS) Types A Current Voltage Temp. TSM 50/60 Hz A V DROM I V RROM V Max.-Gate Char. C106F 15 30 50 C 1 0 6 A 1 0 0 C106Q C 1 0 6 Y 3.5 18.5/20 45 200 300 400 500 600 C107Q C 1 0 7 F

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

Q2003LT

Abstract: Q4003LT quadrac Q4004LT Q2010FT1 Q6004FT1 Q6015LT Q4015LT quadrac Q4010LT Q5004FT1
Contextual Info: TECCOR ELEC TR O N IC S IN C 13E 0 | A0 7 2 0 1 ^ O D O U t ê | T - 'A Z - ¡3 j T - j S QUÄiDHÄC’s - 1 . 6 - 1 5 Amp Par! It R M S RMS 0n-State Current Conduction Angle of 360* (5) MT2 MT1^ ^ Current Voltage at Blocking M ax Rated Voltage Gate Open

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current

140D

Abstract: T0202-2 X0403 TQ-202 T0-202
Contextual Info: r z 7 SG S-THO M SO N ^ IM v. m eiiim iCTCTiicg_ X04xxxE/F SENSITIVE GATE SCR FEATURES = 4A = 200V to 800V • Low Ig t < 200|xA ■ It rm s . V d rm DESCRIPTION The X04xxxE/F series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose

K2400F1

Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
Contextual Info: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region

n177

Abstract: LM320MLP-12 LM320MLP12 LM320MLP LM320MLP-15 LM320L TQ-202 LM137 LM320M LM320ML
Contextual Info: LM320L/ LM320ML Series Voltage Regulators yw\ National JlA Semiconductor LM320L/LM320ML Series 3-Terminal Negative Regulators General Description The L M 3 2 0 L /L M 3 2 0 M L series o f 3 -term inal negative voltage regulators features fixe d o u tp u t voltages o f -5 V ,

03U13

Abstract: SGT10S10
Contextual Info: t&\ Ha r r is SGT03U13, SGT06U13, SGT23U13 U V S E M I C O N D U C T O R Unidirectional Transient Surge Suppressors January 1998 S u rg e C tO r Features Description • Clamping Voltages: 33V, 60V, or 230V These surgector devices are designed to protect telecommu­

AC POWER ZENERS

Contextual Info: Surgector Products Series Overview Surgectors are the Harris discrete Silicon thyristor technol­ ogy devices that are comprised of self-triggered unidirec­ tional and bidirectional types, as well as unidirectional externally triggered types, all listed in Table 1.

LM78M5

Abstract: LM341P-15 LM341P-12 LM341P12 TIS25 LM341P LM341P5 TQ-202 LM341P15 LM341
Contextual Info: LM341 Series ygA National mH Semiconductor LM341 Series 3-Terminal Positive Regulators General Description The LM341-XX series of three terminal regulators is avail­ able with several fixed output voltages making them useful in a wide range of applications. One of these is local on card

nec 5p05m

Abstract: 5P1M nec nec 3S4M nec 3p4m PH301 3S4M 3p4M sr-101c 5P1M 5P05M
Contextual Info: N E C STC D E L E C T R O N I C S INC • b 457525 O G O b l D S 1 C Opto-Electronic Devices NEPOG E T ^ - D l ■WWMUli- n Light-Em itting Diodes Color p na o rQi Green A m kar MiTiDer Infrared Package Type No. Material TO-18 (Clear Plastic) TO-18 (Clear Glass)

T0202

Contextual Info: r r z SCS-THOMSON Ä 7 # K LiOlF^OlQ ! Z04XXXE/F SENSITIVE GATE TRIACS FEATURES •It rms = 4A > V Drm = 400V to 800V ■Ig t ^ 3 m A 1 0 m A DESCRIPTION The Z04xxxE/F series of triacs uses a high performance TO P G LA SS PNPN technology. These parts are intended for general purpose

transistor pnp ecg 180

Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts

SHS210

Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)

K1500E

Abstract: K1100A
Contextual Info: TECCÔR ELECTRONICS INC fiê ? 2 ô n 24E D DOGISHS S "-ZS-OG [¡t e c c o r III ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 •PHONE 214/580-1515 FAX 214/550-1309 SIDAC 95-330 VOLTS} t General Description Applications The Sidac is a silicon bilateral voltage triggered

Bt 2313

Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: CA3273 HARRIS SEMICONDUCTOR High-Side Driver May 1992 Features Description • Equivalent High Pass p-n-p Transistor The CA3273 is a power IC equivalent of a p-n-p pass tran­ sistor operated as a high-side-dfiver current switch in either the saturated ON or cutoff (OFF) modes. The CA3273

LM 1122

Abstract: 320L LM320MLP15 LM 1123 LM series voltage regulators IC LM320 IC LM320 output voltage
Contextual Info: LM320L/ LM320ML Series M National Æjê Semiconductor Voltage Regulators LM320L/LM320ML Series 3-Terminal Negative Regulators General Description The LM 320L/LM 320M L series of 3-terminal negative voltage regulators features fixed output voltages of -5 V ,

2N8402

Abstract: SN232 2n883 mi SN2014 2n4146 2N3560
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T 3 '- ä $ - 'O discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current 1 44 l (»m p») Max. Forward Max. R ev in t Voltate» Vfo m / V hom

ztx214 Transistor

Abstract: 2N3904 70570 BC415P 2n4123 transistor ZTX109 DSAIH000142303. transistor 2N5210 BS3934
Contextual Info: ZETEX SEMICOND UCT ORS IbE D • ^70570 GGObam 5 ■ ZETB E-LINE SPECIFICATIONS ~ ^ „ I - c °l audio pre-amplifiers as well as universal applications The transistors on this page are characterised for low noise, low level amplification and are ideally suited for