THZ028B05 Search Results

Contextual Info: THZ028B05 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage28 @I(Z) (A) (Test Condition)250u Tolerance (%)5ì P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.200 Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleChip

T3D zener DIODE

Abstract: T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56
Contextual Info: SP RA GUE /S EMIC OND GROUP 8 5 14 01 9 SPRAGUE. =13 D • Ô513Ô5D 0D03bE2 3 ■ S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Leakage Current Zener Voltage Zener Impedance

DDD74T

Abstract: THZ015B05
Contextual Info: ELECTRICAL CHARACTERISTICS at TA = + 25°C, VF = 1.5 V Max. @ IF = 200 mA mmÊXSËÊÊSËËÊÊÊÊM @v„ Device Allegro V, e 250 MA 2 ^ 0 1 mA Max. 10°o Toi. Type Typet (V) (U) (uA) (V) *vH (5°o Toi.) Geometry 1N4109 THZ015B05 15 200 0.05 10.5 11.4 ZKB

1N4109

Abstract: 1N4110 1N4111 1N4112 1N4113 THZ015B05 THZ016B05 THZ017B05 THZ018B05 THZ019B05
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE J> • GS04338 0DGti532 544 ■ ALGR ELECTRICAL CHARACTERISTICS at TA = + 25°C, V = 1.5 V Max. @ I_ = 200 inA i F 'r Device Type Allegro Vz @ 250nA Z CT@ 1 mA Typet V (Cl) @VR @V„ Max. (10% Toi.) (5% Toi.) (jiA) (V) (V) Geometry

2u 62 diode

Abstract: THZ3R9B05 ZAA 18 THZ Series diode 2U 66 THZ5R6B05 QSG433 THZ2R4B05 THZ2R7B05 THZ4R7B10
Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. =13 D • D5QM33Ö 00 G 3 b2 E S ■ ALGR 9 3 0 0 3 6 2 2 bT'/S-ÖS S E M I C O N D S / ICS DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Leakage Current