T3D zener DIODE
Abstract: T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56
Contextual Info: SP RA GUE /S EMIC OND GROUP 8 5 14 01 9 SPRAGUE. =13 D • Ô513Ô5D 0D03bE2 3 ■ S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Leakage Current Zener Voltage Zener Impedance
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0d03be2t3d zener diodet3d 63 zener diodezener diode t3d+7t3d zenert3d 87t3d 47 diodet3d 66 diodet3d 19 zener diodet3d 15 zener diodediode t3d 56
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DDD74T
Abstract: THZ015B05
Contextual Info: ELECTRICAL CHARACTERISTICS at TA = + 25°C, VF = 1.5 V Max. @ IF = 200 mA mmÊXSËÊÊSËËÊÊÊÊM @v„ Device Allegro V, e 250 MA 2 ^ 0 1 mA Max. 10°o Toi. Type Typet (V) (U) (uA) (V) *vH (5°o Toi.) Geometry 1N4109 THZ015B05 15 200 0.05 10.5 11.4 ZKB
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1n41091n41101n41111n4112+81n41131n41141n41151n41161n41171n4118ddd74tthz015b05
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1N4109
Abstract: 1N4110 1N4111 1N4112 1N4113 THZ015B05 THZ016B05 THZ017B05 THZ018B05 THZ019B05
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE J> • GS04338 0DGti532 544 ■ ALGR ELECTRICAL CHARACTERISTICS at TA = + 25°C, V = 1.5 V Max. @ I_ = 200 inA i F 'r Device Type Allegro Vz @ 250nA Z CT@ 1 mA Typet V (Cl) @VR @V„ Max. (10% Toi.) (5% Toi.) (jiA) (V) (V) Geometry
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0s04338250na1n4109thz015b05+81n4110thz016b051n4111thz017b051n4112thz018b051n4113thz019b05
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2u 62 diode
Abstract: THZ3R9B05 ZAA 18 THZ Series diode 2U 66 THZ5R6B05 QSG433 THZ2R4B05 THZ2R7B05 THZ4R7B10
Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. =13 D • D5QM33Ö 00 G 3 b2 E S ■ ALGR 9 3 0 0 3 6 2 2 bT'/S-ÖS S E M I C O N D S / ICS DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Leakage Current
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qsg4330003bssthz1r8b05thz1r8b10+14thz2r0b10thz2r2b05thz2r2b10thz2r4b05thz2r4b10thz036b102u 62 diodethz3r9b05zaa 18thz seriesdiode 2u 66thz5r6b05thz2r7b05thz4r7b10
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