TC55VCM208ASTN
Abstract: TC55VCM208ASTN40
Contextual Info: TC55VCM208ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM208ASTN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
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tc55vcm208astn40288-wordtc55vcm208astn304-bit |
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TC55VCM208ASTN
Abstract: TC55VCM208ASTN40
Contextual Info: TC55VCM208ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM208ASTN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
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tc55vcm208astn40288-wordtc55vcm208astn304-bit |
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TC55VCM208ASTN
Abstract: TC55VCM208ASTN40
Contextual Info: TC55VCM208ASTN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM208ASTN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
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tc55vcm208astn40288-wordtc55vcm208astn304-bit |
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TC554161A
Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA
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bh62uv4000bh616uv4010bh62uv8000bh616uv8010+13bh62uv1600bh616uv1610tc55v4000tc55vem208astnt16lv8017k6x8008t2btc554161ahy62wt08081ek6x8008c2bcy62148er1lv0416k6f1616k6t0808c1d
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TC55VEM416AXBN
Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA
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bh62uv4000bh616uv4010bh62uv8000bh616uv8010+16bh62uv1600bh616uv1610tc55v4000tc55vem208astnt16lv8017k6x8008t2btc55vem416axbnk6f8016u6bhy62wt08081ek6x4008c1fbh-seriescy62147cv30hynix cross referencesamsung k6x1008c2dcy62148etc55vem216abxn
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tsop-56 samsung
Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
Contextual Info: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:
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576mb256mbtsop-56 samsungtc58dvm72a1fti0+8tc58fvm5t2atgtsop1-48thncf1g02dgthncf1g02dgisd-m512tc58nvg0s3afti5thncf128mmgtoshiba nand flash bga
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th50vpf
Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
Contextual Info: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. TC59LM806CFT-50 TC59LM806CFT-55
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tc59lm806cft-50tc59lm806cft-55tc59lm806cft-60tc59lm814cft-50+16tc59lm814cft-55tc59lm814cft-60tc59lm818dmb-30tc59lm818dmb-33tc59lm818dmb-4064m/32mth50vpfth50vpf5783tc55vem208astn55th58nvgtc554161aft-70ltc554161aft-70tc55v8512ji-12tc55vd1636ffi-150tc58128afttc58nvg0s3aft00
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TH58NVG2S3
Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
Contextual Info: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60
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tc59lm806cft-50tc59lm806cft-55tc59lm806cft-60tc59lm814cft-50+16tc59lm814cft-55tc59lm814cft-60tc59lm818dmb-30tc59lm818dmb-33tc59lm818dmb-40tc59lm836dmb-30th58nvg2s3tc554161aft-70l69-206tc55vcm316bsgn55tsop 48 package nand memory toshibatoshiba sram 2 mbitsaft 181tc58fvm6t2aft65tc58*vg*02aft-70l
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