TA250 Search Results

TA250-TR2

Abstract: BASE PULSE TRANSFORMER
Contextual Info: 10 BASE PULSE TRANSFORMER P/N: TA250-TR2 DATA SHEET A. GENERAL SPECIFICATIONS: 1. IEEE 802.3 10 Basc 2.10 Basc 5 and ECMA COMPATIBLE; 2.LOW PROFILC PACKAGCS 16 PIN PATTERN 3.LOW LEAKAGC INDUCTANCE AND WINDING CAPACITANCES FOR FAST RISE TIMES 4. MORE ECONOMICAL THAN DISCRETE TRANSFORMERS.FOUR TRANSFORMERS PER

ecma

Abstract: 06-BJ ISOLATION TRANSFORMERS TA250-06BJ
Contextual Info: 10 BASE PULSE TRANSFORMER P/N: TA250-06BJ DATA SHEET A. GENERAL SPECIFICATIONS: 1. IEEE 802.3 10 Basc 2.10 Basc 5 and ECMA COMPATIBLE 2. LOW PROFILC PACKAGCS 16 PIN PATTERN 3.LOW LEAKAGC INDUCTANCE AND WINDING CAPACITANCES FOR FAST RISE TIMES 4. MORE ECONOMICAL THAN DISCRETE TRANSFORMERS, FOUR TRANSFORMERS PER

TFBGA64

Abstract: M58LW032 M58LW032A TSOP56 synchronous nor flash AI06701
Contextual Info: TA250 TECHNICAL ARTICLE Advanced Architecture 32 Mbit Flash Memory Meets the Challenge of Digital Consumer Applications Ruggero De-Luca, Flash Memory Division STMicroelectronics, Agrate, Italy Digital consumer applications such as set-top boxes STBs , digital video disks (DVDs), digital

TA250-06BK

Contextual Info: 10 BASE PULSE TRANSFORMER P/N: TA250-06BK DATA SHEET A. GENERAL SPECIFICATIONS: 1. IEEE 802.3 10 Basc 2.10 Basc 5 and ECMA COMPATIBLE; 2.LOW PROFILC PACKAGCS 16 PIN PATTERN 3.LOW LEAKAGC INDUCTANCE AND WINDING CAPACITANCES FOR FAST RISE TIMES 4. MORE ECONOMICAL THAN DISCRETE TRANSFORMERS, FOUR TRANSFORMERS PER

Contextual Info: 1U AC-DC power supply High power AC-DC power supply FETA series FETA series High power AC-DC power supply High High h power power High High h efficiency effi fficiiency y High High power pow power er 2500W 250 2500W 0W TA2500B-48 (FETA2 (FE TA2500 500B-4

shunt trip mccb

Abstract: e7819 LR43556 JGH3250NN JGE3250NN MTST230V HMCP MTST120V LS CIRCUIT BREAKERS LGE3630NN
Contextual Info: Eaton’s Cutler-Hammer Series G Moulded Case Circuit Breakers, 15 - 630 A n! Al nglig - Alltid ö pp tillgä e tl id en Alw ! www.chscontrols.se ay op s av ailable - Always Eaton’s Cutler-Hammer Series G Moulded Case Circuit Breakers, 15 - 630 A A New Generation of Moulded Case Circuit Breakers

JT3250T

Abstract: hlddc3600f LT3600T KT3300T KT3400T JT3200T TA250KB kt3225 JT3225T ta602ld
Contextual Info: 12-152 Direct Current Circuit Breakers January 2001 Vol. 1, Ref. No. [0618] Product Selection Table 12-273. Type HFDDC DC Circuit Breakers Maximum Continuous Ampere Rating @ 40°C Complete Circuit Breaker with Line and Load Terminals 1-Pole 2-Pole Catalog

SNT1LP03K

Abstract: shunt trip breaker SNT4LP03K SNT3P04K SNT5LP03K A1X1PK SNT2P04K 3T100FB INK100 3TA225FD
Contextual Info: Cutler-Hammer Molded Case Circuit Breakers Engine Generator Circuit Breakers January 2001 Vol. 1, Ref. No. [0616] Options and Accessories Internal Accessories Table 12-268. Standard Terminals AWG Wire Breaker Max. Range Frame Amp Rating Metric Wire Catalog

IEC-157-1

Abstract: HJD3250F JD3250F 29C603 Cutler-Hammer hjd3250f JD3250F amp IEC157-1 HJD2070 JT3250T JT3150T
Contextual Info: Cutler-Hammer Molded Case Circuit Breakers 70 - 250 Amperes January 2001 12-33 Vol. 1, Ref. No. 10499 J-Frame Product Selection Table 12-56. Types JD, HJD and JDC Thermal-Magnetic Circuit Breakers with Interchangeable Trip Units Max. Cont. Amp Rating @40°C

Contextual Info: TOSHIBA LOGIC/MEMORY MAE D • ^0=17246 0023205 7 *T 0 S 2 TC74HC148AP/AF/ AFN_ 11 8 - T O - 3 L IN E P R I O R I T Y E N C O D E R T ' t " 7 - 2 t *S>7 The TC74HC148A is a high speed CMOS 8-to-3 LINE ENCODER fabricated with silicon gate Cz MOS technology.

k 3878

Abstract: 2N3879 2N650A 2n5202 2N3879A
Contextual Info: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

LD3600

Abstract: Eaton rgc320032e HFD3225 Eaton WESTINGHOUSE scr LS CIRCUIT BREAKERS ld2500 Cutler-Hammer Digitrip RMS 310 trip unit digitrip 310 time curve Digitrip OPTIM 1050 HMCP030H1
Contextual Info: Molded Case Circuit Breakers Series G Circuit Breakers 2.1 Introduction Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

eaton el 198

Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Contextual Info: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com

D2017

Abstract: TA-2502 FTD2017
Contextual Info: Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2017] 3.0 0.65 0.425

MCH3301

Abstract: TA-2508
Contextual Info: Ordering number : ENN6431A MCH3301 P-Channel Silicon MOSFET MCH3301 Ultrahigh-Speed Switching Applications Preliminary Features • • Low ON resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167A [MCH3301] 0.3 0.25 • Package Dimensions 0.15

MCH3301

Contextual Info: Ordering number:ENN6431 P-Channel Silicon MOSFET MCH3301 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. unit:mm 2167 0.25 [MCH3301] 0.3 0.15 1 2.1 1.6 3 2 0.25 0.65 0.85

westinghouse breaker

Abstract: ND312T33W Cutler-Hammer Digitrip RMS 310 Westinghouse mcc 2100 Cutler-Hammer Digitrip RMS 310 trip unit Cutler-Hammer Digitrip RMS 310 rating plug 100-A18ND3 Cutler-Hammer hfd 65k Allen-Bradley SMC 150-A135NBD WESTINGHOUSE life line contactor
Contextual Info: CENTERLINE Motor Control Centers Renewal Parts Selection Guide Series ‘R’ Bulletin 2100 Units Series ‘D’ Bulletin 2400 Units SERIAL NUMBER AND SERIES LETTER INFORMATION YEAR 1971 1972 1973 1974 ‘‘ 1975 1976 1977 1978 1979 1980 1981 1982 1983

2n3878

Abstract: TA7285 2N3879 2N5202
Contextual Info: File N u m b e r 2N3878, 2N3879, 2N5202 766.1 High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For H ig h -S p ee d S w itchin g and L in ea r-A m p lifie r A p p licatio n s Features: • ■ ■ M a x im u m -a re a -o f-o p e ra tio n c u rv e s l o r d c a n d p u ls e o p e r a tio n

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: PHOTO REFLECTOR • GENERAL DESCRIPTION OUTUNE typ. U nit: The NJL5133H is reflex type photo sencer which consist of high power infrared emitting diode and high sensitve Si photo transistor in package. It is suitable for use in paper sensor. <t>\.o G b ■ APPLICATIONS

NE46734

Abstract: cm3x sot89 "NPN TRANSISTOR"
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE46734 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEATURES LOW NOISE FIGURE UNMATCHED 4: 2.4 dB at 500 MHz 2.3 dB TYP at 200 MHz HIGH S21 GAIN4: 12 dB at 500 MHz 20 dB TYP at 200 MHz HIGH PT LOW COST DESCRIPTION Collector Current, Ic (mA)

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im

Contextual Info: MCH6602 Ordering number : EN6445C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6602 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting