T1259 Search Results

MT1259 dram

Abstract: MT1259 ea5 marking
Contextual Info: ic n o N M T1259 256K x 1 DRAM PAGE MODE FEA TU R ES PIN ASSIGNMENT Top View • Industry standard pinout, tim ing an d functions • All inputs, outputs, and clocks are fully TTL com pat­ ible • Single +5V±10% pow er supp ly • Low pow er, 15mW standby; 150mW active, typical

mt1259

Abstract: MT1259 dram
Contextual Info: M T1259 883C cron AVAILABLE A S MILITARY SPECIFICATIONS 1 DRAM PIN ASSIGNMENT Top View • SM D 5962-85152 • JA N M 38510/246 • MIL-STD-883, C lass B 16L/300 DIP (D-2) *A8C 1 M e ] V ss DÜ 2 15 ÜCÄS WEE 3 14 ] Q R A S t 4 13 ] A6 A0[ 5 12 ] A3 11 : a 4

2SC102 transistor

Abstract: 2N2342 2sc102 TK30556 2N2902 M10A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

Contextual Info: |U|IC=RON MT9259 DRAM MODULE 256K X 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package SIP • Low profile, double-side mount (0.45 in) • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L

2N2902

Abstract: 2SC102 1763-0625 10MSA 2SD118Y 685M TK30558 TK30557 TK30559 TK30560
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

c2315

Abstract: IC401B C2068 R1962 asus mcp 430 nvidia C1567 PJP5403 C2061 C51MV MCP51
Contextual Info: A B C D E T13M SCHEMATIC Revision 1.1 Content PAGE 2 3 4 5 PAGE SYSTEM PAGE REF. 1 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 AMD S1 CPU 1 -HT&MISC AMD S1 CPU(2)-DDRII

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

sft214

Abstract: AT1138 SFT213 2N2709 GERMANIUM PNP LOW POWER TRANSISTORS 2sb234 2sb232 SFT240 AOY25 SFT212
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol

Contextual Info: M IC R O N MT4259 256K X 4 DRAM DRAM MODULE LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 22-pin single-in-line memory module • Low profile • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL compatible

30-pin simm memory

Abstract: SIMM 30-pin MT1259 30-pin SIMM RAM 30 pin simm "30 pin simm" J411 30 pin simm memory N 005719 simm 30-pin 9-bit
Contextual Info: ci' m99 1?P' u m/ à i iœ MICRON v rv • 'T v TECHNOLOGY. MC. 2805 Easi Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 FAX (208) 343-2536 MTB8512DM ^ ^ Z/^ 5 1 2 K x 8)BIT DYNAMIC RAM J V IT B 9 5 1 2 D M ^ ^ y ^ g g ^ 1 2 K x ¿)BIT DYNAMIC RAM

30-pin simm memory

Abstract: 30-pin SIMM RAM MT1259 30-pin SIMM
Contextual Info: MICRON I 79 I ? ? 1 / TECHNOLOGY. MC. 2805 Easi Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 FAX (208) 343-2536 MTB8512DM ^ ^ Z//^ Ì1 2 K x 0>BIT DYNAMIC RAM J V IT B 9 5 1 2 D M ^ ^ y ^ ^ 1 2 K x $ B \T DYNAMIC RAM Performance • Service

ta 1259 n

Abstract: t1258 34032T 1259 cooling
Contextual Info: eupec T1 2 5 8 N T 1259 N S2E ]> • 34032*17 OOOOfll? OflO ■ U P E C Typenreihe/Type ränge T 1258 N/T 1259 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDRM, VRRM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

2n2709

Abstract: 2N4411 2sc113 MT1131A 400M BSV55AP BSV55P T072 mt1256 GT1644
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment