T10J311 Search Results

T10J311 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GT10J311 Abstract: h0320 Contextual Info: TOSHIBA G T10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT 10J311 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)	OCR Scan	GT10J311 GT10J311 h0320	PDF
ENFP Contextual Info: T O SH IB A G T10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT T10J311 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)	OCR Scan	T10J311 GT10J311 30//s ENFP	PDF

Catalog Datasheet

Type

Document Tags

PDF

GT10J311

Abstract: h0320
Contextual Info: TOSHIBA G T10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT 10J311 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)

OCR Scan

GT10J311 GT10J311 h0320

PDF

ENFP

Contextual Info: T O SH IB A G T10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT T10J311 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)

OCR Scan

T10J311 GT10J311 30//s ENFP

PDF