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GT10J311 Abstract: h0320 Contextual Info: TOSHIBA G 10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT 10J311 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)	OCR Scan	GT10J311 GT10J311 h0320	PDF

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GT10J311

Abstract: h0320
Contextual Info: TOSHIBA G 10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT 10J311 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)

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GT10J311 GT10J311 h0320

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