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    SISS27DN Search Results

    SISS27DN Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SISS27DN-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A PPAK 1212-8S Original PDF 8
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    SISS27DN Price and Stock

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    Vishay Intertechnologies SISS27DN-T1-GE3

    MOSFET P-CH 30V 50A PPAK 1212-8S
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    DigiKey SISS27DN-T1-GE3 Cut Tape 16,561 1
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    Avnet Americas SISS27DN-T1-GE3 Tape & Reel 19 Weeks 3,000
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    Mouser Electronics SISS27DN-T1-GE3 1,114
    • 1 $1.54
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    Verical () SISS27DN-T1-GE3 4,219 8
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    • 1000 $0.47
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    SISS27DN-T1-GE3 3,000 3,000
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    Newark SISS27DN-T1-GE3 Cut Tape 6,509 5
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    TTI SISS27DN-T1-GE3 Reel 21,000 3,000
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    TME SISS27DN-T1-GE3 1
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    Avnet Asia SISS27DN-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SISS27DN-T1-GE3 20 Weeks 3,000
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    Vishay Siliconix SISS27DN-T1-GE3

    SISS27DN-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 23 A, 30 V, 8-PIN POWERPAK 1212
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    RS SISS27DN-T1-GE3 Bulk 3,000
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    Vishay Siliconix SISS27DNT1GE3

    P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 50A I(D), 30V, 0.0056ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SISS27DNT1GE3 1,918
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    Vishay Huntington SISS27DN-T1-GE3

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    NexGen Digital SISS27DN-T1-GE3 20
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    Win Source Electronics SISS27DN-T1-GE3 21,000
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    SISS27DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiSS27DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0056 at VGS = - 10 V - 50e 0.0070 at VGS = - 6 V - 50e 0.0090 at VGS = - 4.5 V - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm


    Original     		SiSS27DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiSS27DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0056 at VGS = - 10 V - 50e 0.0070 at VGS = - 6 V - 50e 0.0090 at VGS = - 4.5 V - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm


    Original     		SiSS27DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF