SISS27DN Search Results
SISS27DN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SISS27DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A PPAK 1212-8S | Original | 8 |
SISS27DN Price and Stock
Vishay Intertechnologies SISS27DN-T1-GE3MOSFET P-CH 30V 50A PPAK 1212-8S |
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SISS27DN-T1-GE3 | Digi-Reel | 15,042 | 1 |
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SISS27DN-T1-GE3 | Tape & Reel | 12,000 | 26 Weeks | 3,000 |
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SISS27DN-T1-GE3 | 6,051 |
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SISS27DN-T1-GE3 | 12,000 | 3,000 |
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SISS27DN-T1-GE3 | 12,000 | 26 Weeks | 3,000 |
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SISS27DN-T1-GE3 | Tape & Reel | 12,000 | 3,000 |
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SISS27DN-T1-GE3 | Reel | 12,000 | 3,000 |
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SISS27DN-T1-GE3 | 1 |
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SISS27DN-T1-GE3 | 60 Weeks | 3,000 |
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SISS27DN-T1-GE3 | Cut Tape | 1,719 | 0 Weeks, 1 Days | 1 |
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SISS27DN-T1-GE3 | 27 Weeks | 3,000 |
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SISS27DN-T1-GE3 | 35,000 | 1 |
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Vishay Siliconix SISS27DN-T1-GE3SISS27DN-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 23 A, 30 V, 8-PIN POWERPAK 1212 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SISS27DN-T1-GE3 | Bulk | 3,000 |
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Vishay Siliconix SISS27DNT1GE3P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 50A I(D), 30V, 0.0056ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SISS27DNT1GE3 | 1,918 |
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Vishay Huntington SISS27DN-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SISS27DN-T1-GE3 | 20 |
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SISS27DN-T1-GE3 | 21,000 |
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SISS27DN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiSS27DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0056 at VGS = - 10 V - 50e 0.0070 at VGS = - 6 V - 50e 0.0090 at VGS = - 4.5 V - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm |
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SiSS27DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiSS27DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0056 at VGS = - 10 V - 50e 0.0070 at VGS = - 6 V - 50e 0.0090 at VGS = - 4.5 V - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm |
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SiSS27DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of |
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SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 |