SIHFR9012 Search Results

SIHFR9012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFR9012 Abstract: SiHFR9012 Contextual Info: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)	Original	irfr9012 irfu9012 sihfr9012 sihfu9012 +2o-251 o-252	PDF
IRFR9012 Abstract: SiHFR9012 Contextual Info: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)	Original	irfr9012 irfu9012 sihfr9012 sihfu9012 +12002/95/ec	PDF
IRFR9012 Abstract: IRFU9012 SiHFR9012 Contextual Info: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)	Original	irfr9012 irfu9012 sihfr9012 sihfu9012 +2o-251 o-252	PDF
IRFR9012 Abstract: SiHFR9012 Contextual Info: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)	Original	irfr9012 irfu9012 sihfr9012 sihfu9012 +22011/65/eu 2002/95/ec	PDF
IRFR9012 Abstract: SiHFR9012 Contextual Info: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)	Original	irfr9012 irfu9012 sihfr9012 sihfu9012 +111-mar-11	PDF
IRFR9012 Abstract: SiHFR9012 Contextual Info: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)	Original	irfr9012 irfu9012 sihfr9012 sihfu9012 +22011/65/eu 2002/95/ec	PDF
AN609 Contextual Info: SiHFR9012_RC, SiHFU9012_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihfr9012 sihfu9012 an609 8768m +54624m 5917m 3777m 4085m 16-aug-10	PDF
Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s	Original	irfr010 sihfr010 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	irfr010 sihfr010 o-252 2002/95/ec +22011/65/eu 12-mar-12	PDF
Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	irfr010 sihfr010 2002/95/ec 2011/65/eu +112-mar-12	PDF
Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	irfr010 sihfr010 2002/95/ec 2011/65/eu +112-mar-12	PDF
IRFR9012 Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	irfr010 sihfr010 2002/95/ec 11-mar-11 +1irfr9012	PDF
IRFR9012 Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s	Original	irfr010 sihfr010 2002/95/ec 2011/65/eu +3js709a 02-oct-12 irfr9012	PDF
S10 diode Abstract: IRFR9012 IRFR010 IRFU9012 SiHFR010 SiHFR010-E3 Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	irfr010 sihfr010 o-252 2002/95/ec +518-jul-08 s10 diode irfr9012 irfu9012 sihfr010-e3	PDF