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    Vishay Siliconix

    Vishay Siliconix SIHF630STRL-GE3

    SIHF630STRL-GE3 N-CHANNEL MOSFET TRANSISTOR, 9 A, 200 V, 3-PIN D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHF630STRL-GE3 Bulk 10
    • 1 -
    • 10 $1.99
    • 100 $1.75
    • 1000 $1.75
    • 10000 $1.75
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    SIHF630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


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    irf630ssihf630s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf630o-22012-mar-07 PDF

    IRF630PBF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


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    irf630sihf6302002/95/eco-220ab+211-mar-11irf630pbf PDF

    IRF630

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRF630pbf

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+32011/65/eu12-mar-12irf630pbf PDF

    Contextual Info: IRF630S_RC, SiHF630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irf630ssihf630san6098742m+40026m8165m3067m9761m PDF

    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    irf630ssihf630s2002/95/eco-263+118-jul-08 PDF

    sihf630s

    Abstract: SMD diode NC
    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration


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    irf630ssihf630ssmd-22012-mar-07+1smd diode nc PDF

    AN609

    Abstract: IRF630 SiHF630
    Contextual Info: IRF630_RC, SiHF630_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irf630sihf630an60909-mar-10 PDF

    smd e3a

    Abstract: IRF630S SiHF630S SiHF630S-E3 SMD-220 IRF630STRLPBF
    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration


    Original
    irf630ssihf630ssmd-22018-jul-08+3smd e3asihf630s-e3irf630strlpbf PDF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    irf630ssihf630s2002/95/eco-263+32011/65/eujs709a02-oct-12 PDF

    IRF630STRLPBF

    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    irf630ssihf630s2002/95/eco-263+32011/65/eu12-mar-12irf630strlpbf PDF

    AN609

    Abstract: IRF630S SiHF630S
    Contextual Info: IRF630S_RC, SiHF630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irf630ssihf630san60912-mar-10 PDF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    IRF630S

    Abstract: SiHF630S SiHF630S-E3 SiHF630S-GE3
    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    irf630ssihf630s2002/95/eco-263+311-mar-11sihf630s-e3sihf630s-ge3 PDF

    IRF630 MOSFET driver

    Abstract: SiHF630 irf630 IRF630PBF SiHF630-E3 IRF630 p
    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf630o-22018-jul-08+4irf630 mosfet driverirf630pbfsihf630-e3irf630 p PDF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original
    irf630sihf6302002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration


    Original
    irf630ssihf630ssmd-22018-jul-08 PDF

    ca3103

    Abstract: 2n2222 -331 Cd4093 SiHF
    Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2


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    an-937ca31032n2222 -331cd4093+1sihf PDF