SI7230DN Search Results

Contextual Info: Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 S 3.30 mm • DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck

Contextual Info: Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 S 3.30 mm • DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck

Si7230DN-T1-E3

Abstract: 74396
Contextual Info: Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 • TrenchFET Power MOSFET • PWM Optimized • New Low Thermal Resistance Power-PAK® Package with Low 1.07 mm Profile

Si7230DN-T1-E3

Abstract: 74396 Si7230DN Si7230DN-T1-GE3
Contextual Info: Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 S 3.30 mm • DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck

Contextual Info: Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 S 3.30 mm • DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck

9622 transistor

Abstract: AN609 Si7230DN 78652 692-02
Contextual Info: Si7230DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

1600 v mosfet

Abstract: Si7230DN Si7230DN-T1-E3
Contextual Info: Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 • TrenchFET Power MOSFET • PWM Optimized • New Low Thermal Resistance Power-PAK® Package with Low 1.07 mm Profile

74358

Abstract: SI7230dn si7230 S-62485
Contextual Info: SPICE Device Model Si7230DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

LS-354LP

Abstract: MDB41 C376-C378 Compal Electronics MDB2 Compal ls- vga Compal LS-354lp compal 100NF-50V ISL6269A
Contextual Info: 5 4 2 1 PART 1 OF 7 35mil TP2 D TP3 35mil C 3 U1A TP1 35mil 35mil TP4 B TP5 TP_22mil_SM_top TP_22mil_SM_top TP6 PCIE_RXP0 PCIE_RXN0 AK33 AJ33 PCIE_RX0P PCIE_RX0N PCIE_RXP1 PCIE_RXN1 AJ35 AJ34 PCIE_RX1P PCIE_RX1N PCIE_RXP2 PCIE_RXN2 AH35 AH34 PCIE_RX2P PCIE_RX2N

SN0608098-GP

Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Contextual Info: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation

npce781la0dx

Abstract: NPCE781 npce781la TI_BQ24721C_QFN_32P NPCE78 BAT54C3 RTL8103 realtek ALC 3232 SLG8SP510T C4161
Contextual Info: Perugia 10M MP Build A03 2009.05.05 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Perugia10M SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A2250501 1 OF x01 63

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Si4830

Abstract: Fast Switching mosfet SI3433B smd diode 615
Contextual Info: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6

kbc1091

Abstract: ICS9LPRS397 smsc kbc 1091 fdmc8884 Inventec 1310A22527-0-MTR Inventec Invicta si7326 88E8072 ich9
Contextual Info: S-SERIES 2009 INVICTA Intel-Discrete MV Build (A03) - Final 2009.03.18 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : INVICTA Cycle1 SIZE CODE A3 CS DOC. NUMBER

SN0608098-GP

Abstract: BQ24745RHDR-GP TPS51117PWR-GP nxp pr533 foose rs780M mec5035 c840 dell BCM5761 RS780
Contextual Info: 5 4 3 2 1 FOOSE UMA 14" Schematics Document D D AMD Giffin CPU S1G2 RS780M + SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,

Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no